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RD5.6EB1

Description
5.41 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size59KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

RD5.6EB1 Overview

5.41 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE
(DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in the
popular DO-35 package with DHD (Double Heatsink Diode) construction
having allowable power dissipation of 500 mW. To meet various application
at customers, V
z
(zener voltage) is classified into the tight tolerance under
the specific suffix (B, B1 to B7).
PACKAGE DIMENSIONS
(in millimeters)
φ
0.5
25 MIN.
Cathode
indication
• DHD (Double Heatsink Diode) Construction
• V
z
: Applied E24 standard (RD130E to RD200E: 10 volts step)
• DO-35 Glass sealed package
φ
2.0 MAX.
25 MIN.
ORDER INFORMATION
RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7”
should be applied for orders for suffix “B”.
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Forward Current
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
I
F
P
P
RSM
T
j
T
stg
200 mA
500 mW
100 W (t = 10
µ
s)
175 ˚C
–65 to +175 ˚C
to see Fig. 17
Document No. D10213EJ5V0DS00 (5th edition)
Date Published December 1998 N CP(K)
Printed in Japan
©
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