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RE46C121

Description
CMOS Ionization Smoke Detector ASIC with Interconnect
File Size161KB,7 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet View All

RE46C121 Overview

CMOS Ionization Smoke Detector ASIC with Interconnect

R&E International
A Subsidiary of Microchip Technology Inc.
RE46C120
CMOS Ionization Smoke Detector ASIC
Product Specification
General Description
The RE46C120 is a low power CMOS ionization type
smoke detector IC. With a few external components
this circuit will provide all the required features for an
ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. The TONE input allows for selection of a
temporal pattern or a 2/3 duty cycle continuous tone.
The temporal horn pattern supports the NFPA 72
emergency evacuation signal.
Although this device was designed for smoke detection
utilizing an ionization chamber it could be used in a
variety of security applications.
Utilizing low power CMOS technology the RE46C120
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
Guard Outputs for Ion Detector Input
+/-0.75pA Detect Input Current
Internal Reverse Battery Protection
Internal Low Battery Detection
Pin Selectable Horn Pattern
Low Quiescent Current Consumption (<6.5uA)
16L PDIP
ESD Protection on all Pins
Compatible with MC145017, MC14467
Available in RoHS Compliant Pb Free Packaging
Pin Configuration
DETCOMP
N/C
LBADJ
TONE
LED
VDD
RBIAS
FEED
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GUARD2
DETECT
GUARD1
VSEN
OSCAP
HS
HB
VSS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED
FEED Input Voltage Range
Reverse Battery Time
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V
DD
V
in
V
infd
T
RB
I
in
T
A
T
STG
T
J
VALUE
15
-.3 to V
dd
+.3
-10 to +22
5
10
-10 to 60
-55 to 125
150
UNITS
V
V
V
S
MA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used
when handling this product. Damage can occur when exposed to extremely high static electrical charge
© 2009 Microchip Technology Inc.
DS22157A-page 1

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