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RGP30J

Description
3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size130KB,4 Pages
ManufacturerTAITRON Components
Websitehttp://www.taitroncomponents.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RGP30J Overview

3 A, SILICON, RECTIFIER DIODE

RGP30J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTAITRON Components
Reach Compliance Codeunknow
applicationEFFICIENCY
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.25 µs
Reverse test voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
3.0A Sintered Glass Passivated
Fast Recovery Rectifier
RGP30A
RGP30M
3.0A Sintered Glass Passivated Fast Recovery Rectifier
Features
Sintered glass passivated (SGP) rectifier chip
Capable of meeting environmental standards of MIL-S-19500
For use in high frequence rectifier circuits
Fast switching for high efficiency
Typical I
R
less than 0.1uA
High temperature soldering guaranteed 260°C/10 seconds
/.0375" (9.5mm) lead length, 5lbs (2.3kg) tension
DO-201AD
RoHS Compliance
Mechanical Data
Case:
Epoxy:
Terminals:
Polarity:
Weight:
JEDEC DO-201AD molded plastic body
Plastic package has UL flammability classification 94V-0
Plated axial leads, solderable per MIL-STD-750, Method 2026
Color band denotes cathode end
0.004 ounces, 1.12 grams
Maximum Ratings and Electrical Characteristics
(T
A
=25ºC unless noted otherwise)
Symbol
Description
Maximum
Repetitive Peak
Reverse Voltage
Maximum RMS
Voltage
Maximum DC
Blocking Voltage
Maximum
Average Forward
Rectified Current
Peak Forward
Surge Current
RGP
30A
50
35
50
RGP
30B
100
70
100
RGP
30D
200
140
200
RGP
30G
400
280
400
3.0
RGP
30J
600
420
600
RGP
30K
800
560
800
RGP
30M
1000
700
1000
Unit
V
V
V
A
Conditions
V
RRM
V
RMS
V
DC
I
F(AV)
0.375” (9.5mm)
lead length(Fig.1)
8.3ms single half
sine-wave
superimposed on
rated load (JEDEC
Method)
I
FSM
125
A
TAITRON COMPONENTS INCORPORATED
www.taitroncomponents.com
Tel:
Fax:
(800)-TAITRON
(800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/DX 2007-06-04
Page 1 of 4

RGP30J Related Products

RGP30J RGP30B RGP30G RGP30A RGP30D RGP30K RGP30M
Description 3 A, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker TAITRON Components TAITRON Components TAITRON Components TAITRON Components TAITRON Components TAITRON Components TAITRON Components
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Minimum breakdown voltage 600 V 100 V 400 V 50 V 200 V 800 V 1000 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A 125 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 600 V 100 V 400 V 50 V 200 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.25 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.5 µs 0.5 µs
Reverse test voltage 600 V 100 V 400 V 50 V 200 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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