RJH60D0DPK-00-T0 datasheet, PDF

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RJH60D0DPK-00-T0: DescriptionSilicon N Channel IGBT Application: Inverter; CategoryDiscrete semiconductor The transistor; File Size158KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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RJH60D0DPK-00-T0 Overview

Silicon N Channel IGBT Application: Inverter

RJH60D0DPK-00-T0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	TO-3P
package instruction	SC-65, TO-3P, 3 PIN
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	30 V
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	140 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	180 ns
Nominal on time (ton)	85 ns

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Preliminary

RJH60D0DPK

Silicon N Channel IGBT

Application: Inverter

Features

•

High breakdown-voltage

•

Low on-voltage

•

Built-in diode

REJ03G1845-0100

Rev.1.00

Oct 14, 2009

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

1. Gate

2. Collector

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW

≤

μs,

duty cycle

≤

2. Value at Tc = 25°C

Symbol

CES

/ V

GES

ic(peak)

Note1

(peak)

Note1

C Note2

θj-c

Note2

Tstg

Ratings

600

±30

140

0.89

150

–55 to +150

Unit

°C/ W

°C

REJ03G1845-0100 Rev.1.00 Oct 14, 2009

Page 1 of 3

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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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Ltd.

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Ltd.

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Colophon .7.2

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