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Maximum Reverse Voltage
DC Forward Current
Maximum Forward Current
Operating Temperature
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T
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Reverse leakage current
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery energy
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I
R
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t
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T
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CC
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di/dt = 1100 A/µs, L
σ
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T
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Switch : 5SMX12M1700
2
85
25
600
13
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2.0
2.05
100
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V
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Overall die
Dimensions
LxW
13.6 x 6.8
11.9 x 5.1
370
±
15
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4
1.2
Exposed
LxW
Front metal
Thickness
Metallization
1)
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mm
mm
µm
µm
µm
Front
Back
1)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
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Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Doc. No. 5SYA1659-00 Aug 02
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
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Internet
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