MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
RM50HG-12S
DC current ..................................
50A
Repetitive peak reverse voltage
................
600V
•
t
rr
Reverse recovery time .............
0.2
µ
s
•
ONE ARM
•
Non-Insulated Type
•
I
DC
•
V
RRM
APPLICATION
For snubber circuit (IPM or IGBT module)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
20.5MAX.
6±
0.2
φ3.2±
0.2
5±
0.3
Non-Isolation side (metal) 4
2.5
26±
0.5
1
3
2.5±
0.3
20MIN.
2
4
1
1±
0.2
5.45±
0.5
2
3
2±
0.3
3±
0.3
5.45±
0.5
0.6±
0.2
Sep.2001
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
R (DC)
Parameter
Repetitive peak reverse voltage
Reverse DC voltage
(T
j
=25°C)
Voltage class
12
600
480
Unit
V
V
Symbol
I
DC
I
FSM
I
2t
T
j
T
stg
V
iso
—
—
DC current
Parameter
Resistive load, T
C
=80°C
Conditions
➀, ➂
Collective of terminal
One half cycle at 60Hz, peak value
➀, ➂
Collective of terminal
Value for one cycle surge current
Ratings
50
1000
—
–40~+150
–40~+125
Unit
A
A
A
2
s
°C
°C
V
N·m
kg·cm
g
Surge (non-repetitive) forward current
I
2t
for fusing
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Charged part to case
Mounting screw M3
Typical value
—
0.59~0.98
6~10
5
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
Parameter
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
T
j
=25/125°C, V
RRM
applied
T
j
=25°C, I
FM
=200A, Instantaneous meas.
I
FM
=200A, Tj=25°C, di/dt=–1000A/µs, V
R
=300V
Junction to case
Case to fin, conductive grease applied
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
Max.
0.1/1.0
4.0
0.2
—
0.5
0.5
Unit
mA
V
µs
µC
°C/
W
°C/
W
Sep.2001
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7
5
3
2
10
2
7
5
3
2
10
1
1.0
2.0
3.0
4.0
5.0
6.0
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10
0
2 3 5 7 10
1
2
0.5
T
j
=25°C
0.4
FORWARD CURRENT (A)
Z
th (j-c)
(°C/W)
0.3
0.2
0.1
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
FORWARD VOLTAGE (V)
RATED SURGE (NON-REPETITIVE)
FORWARD CURRENT
1000
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
800
600
400
200
0
1
2 3
5 7 10
20 30
50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
Sep.2001
Power technology
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