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IR30ASR04N

Description
Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, DIE-2
CategoryAnalog mixed-signal IC    Trigger device   
File Size334KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

IR30ASR04N Overview

Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, DIE-2

IR30ASR04N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeDIE
package instructionUNCASED CHIP, O-XUUC-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JESD-30 codeO-XUUC-N2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Bulletin I0144J 04/01
IR30ASR..N SERIES
PHASE CONTROL THYRISTORS
Junction Size:
V
RRM
Class:
Passivation Process:
30 mm Diameter
400 and 600 V
Diffused Junction
Major Ratings and Characteristics
Parameters
V
TM
V
RRM
I
GT
V
GT
I
H
I
L
Maximum On-state Voltage
Reverse Breakdown Voltage Range
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Maximum Holding Current
Typical Latching Current
Units
1.25 V
400 and 600 V
200 mA
3.0 V
600 mA
1000 mA
Test Conditions
T
J
= 25°C, I
T
= 1000 A
T
J
= 125°C, I
RRM
= 50 mA
T
J
= 25°C, I
RRM
= 10 mA
T
J
= 25° C
T
J
= 25° C
T
J
= 25° C, anode supply 12 V resistive load
T
J
= 25° C, anode supply 12 V resistive load
Mechanical Characteristics
Nominal Back Metal Composition
Nominal Front Metal Composition
Chip Dimensions
Recommended Storage Environment
Al (130KA)
Nickel plate molybdenum disc
30 mm diameter (see drawing)
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93897
www.vishay.com
1

IR30ASR04N Related Products

IR30ASR04N IR30ASR06N
Description Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, DIE-2 Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, DIE-2
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Parts packaging code DIE DIE
package instruction UNCASED CHIP, O-XUUC-N2 UNCASED CHIP, O-XUUC-N2
Contacts 2 2
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Maximum DC gate trigger current 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V
Maximum holding current 600 mA 600 mA
JESD-30 code O-XUUC-N2 O-XUUC-N2
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) 225 225
Certification status Not Qualified Not Qualified
Off-state repetitive peak voltage 400 V 600 V
Repeated peak reverse voltage 400 V 600 V
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR

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