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S3J

Description
RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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RECTIFIER DIODE

S3J Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionR-PDSO-C2
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
surface mountYES
Terminal formC BEND
Terminal locationDUAL
S3A thru S3M
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE
POWER DISSIPATION
- 50
to
1000Volts
- 3.0
Amperes
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability
.128(3.25)
.108(2.75)
SMC
.245(6.22)
.220(5.59)
classification 94V-0
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=100℃
@T
L
=75
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3.0
S3J
600
420
600
S3K
800
560
800
S3M
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJL
R
θJA
T
J
T
STG
200
1.2
5.0
250
40
10
50
-55 to +150
-55 to +150
A
V
uA
pF
℃/W
℃/W
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction to lead.
3.Thermal resistance junction to ambient.
~ 35 ~

S3J Related Products

S3J S3A S3D S3B S3G S3K S3M
Description RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Maker HY Electronic HY Electronic - HY Electronic HY Electronic HY Electronic HY Electronic
package instruction R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknow - unknow unknown unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V - 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 100 A 100 A - 100 A 100 A 100 A 100 A
Number of components 1 1 - 1 1 1 1
Phase 1 1 - 1 1 1 1
Number of terminals 2 2 - 2 2 2 2
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A - 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 600 V 50 V - 100 V 400 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA - 5 µA 5 µA 5 µA 5 µA
surface mount YES YES - YES YES YES YES
Terminal form C BEND C BEND - C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL - DUAL DUAL DUAL DUAL
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