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2SK2479-AZ

Description
Power Field-Effect Transistor, 3A I(D), 900V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size118KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK2479-AZ Overview

Power Field-Effect Transistor, 3A I(D), 900V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

2SK2479-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)5.4 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2479
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 ± 0.2
FEATURES
Low On-Resistance
R
DS(on)
= 7.5
(V
GS
= 10 V, I
D
= 2.0 A)
6.0 MAX.
Low C
iss
C
iss
= 485 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
10
µ
s, Duty Cycle
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±30
±3.0
±8.0
70
1.5
150
3.0
5.4
V
V
A
A
W
W
˚C
A
mJ
4
1 2 3
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
–55 to +150 ˚C
Body
Diode
Gate
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
0
Source
Document No. D10271EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
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