SD103A...SD103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD103A, B, C is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications. Other uses are for click suppression,
efficient full wave bridges in telephone subsets, and as
blocking diodes in rechargeable low voltage battery
system.
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Max. 0.5
Min. 27.5
Max. 1.9
XXX
ST
Max. 3.9
This diode is also available in MiniMELF case with type
designation LL103A, B, C.
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
SD103A
SD103B
SD103C
Symbol
V
RRM
P
tot
I
FSM
T
j
T
S
Value
40
30
20
400
15
125
- 55 to + 175
1)
Unit
V
mW
A
O
Power Dissipation
Single Cycle Surge 60 Hz Sine Wave
Junction Temperature
Storage Temperature Range
1)
C
C
O
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 20 mA
at I
F
= 200 mA
Reverse Leakage Current
at V
R
= 30 V
at V
R
= 20 V
at V
R
= 10 V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 5 mA to 200 mA , recover to 0.1 I
R
Symbol
V
F
V
F
SD103A
SD103B
SD103C
I
R
Typ.
-
-
-
Max.
0.37
0.6
5
Unit
V
V
µA
C
tot
t
rr
50
10
-
-
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
SD103A...SD103C
Typical variation of fwd. current
vs.fwd.voltage for primary conduction
through the Schottky barrier
mA
10
3
Typical high current forward
conduction curve
tp=300 s, duty cycle=2%
A
SD103
SD103
5
I
F
10
2
I
F
4
10
3
1
2
10
-1
1
10
-2
0
0.5
V
F
1V
0
0
0.5
1
V
F
1.5V
Typical non repetitive forward surge
current versus pulse width
Rectangular pulse
A
50
SD103
Typical variation of reverse current
at various temperatures
A
10
3
SD103
Tamb=125
o
C
100
o
C
10
2
75
o
C
10
50
o
C
I
F
40
I
R
30
20
1
10
10
-1
10
-3
10
-2
10
-1
1
10
t
p
10
2
10
3
ms
0
10
20
30
V
R
40
50V
25
o
C
0
Blocking voltage deration
versus temperature at various
average forward currents
V
50
SD103
Typical capacitance
versus reverse voltage
pF
100
7
5
4
3
2
SD103
V
R
40
100 mA
30
200 mA
20
I
F
=400 mA
C
tot
10
7
5
4
3
2
10
0
0
100
T
amb
200 C
o
1
0
10
20
30
V
R
40
50V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
PCB Design
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