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SDR1-16SMSTXV

Description
1 A, 1600 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size157KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR1-16SMSTXV Overview

1 A, 1600 V, SILICON, SIGNAL DIODE

SDR1-16SMSTXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETIC SEALED, SMS, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
Maximum reverse recovery time0.07 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1-12 thru SDR1-16
and
SDR1-12SMS and SDR1-16SMS
1.0 AMP
1200
1600 VOLTS
70 nsec ULTRA FAST RECTIFIER
FEATURES:
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR1
__ __ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Family
-12 = 1200 V
-14 = 1400 V
-16 = 1600 V
Ultra Fast Recovery: 70 ns Max @ 25
°
C
4/
Single Chip Construction
PIV to 1600 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
2/
Hyper Fast Versions available
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25°C)
SYMBOL
SDR1-12 and SDR1-12SMS
SDR1-14 and SDR1-14SMS
SDR1-16 and SDR1-16SMS
VALUE
1200
1400
1600
1
25
-65 to +175
35
18
SMS
UNIT
Volts
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
and T
STG
R
θJL
R
θJE
Amp
Amps
°C
°C/W
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
A
= 25°C)
Operating & Storage Temperature
Thermal Resistance, Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
NOTES:
1/
For Ordering Information, Price, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/
Recovery Conditions: I
F
= 0.5 Amp,
I
R
= 1.0 Amp,
I
RR
to .25 Amp.
Axial Leaded
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0103B
DOC

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