Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR10D thru SDR10M
and
SDR10DSMS thru SDR10MSMS
Series
10 AMPS
200
─
1000 VOLTS
5 µs STANDARD RECOVERY
RECTIFIER
FEATURES:
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR10
__ __ __
│
│
│
│
│
│
│
│
│
│
└
│
└
Screening
2/
│
__
= Not Screened
│
TX = TX Level
│
TXV = TXV
│
S = S Level
│
└
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Voltage/Family
D = 200V
G = 400V
J = 600V
K = 800 V
M = 1000 V
•
•
•
•
•
•
•
•
•
•
•
Standard Recovery: 5 µs maximum
4/
PIV to 1000 Volts
Hermetically Sealed
Low Reverse Leakage Current
Single Chip Construction
High Surge Rating
Replaces Larger DO-4 Rectifiers
Low Thermal Resistance
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Faster Recovery Devices Available - Contact
Factory
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
SDR10D & SDR10DSMS
SDR10G & SDR10GSMS
SDR10J & SDR10JSMS
SDR10K & SDR10KSMS
SDR10M & SDR10MSMS
SYMBOL
V
RRM
V
RWM
V
R
I
O
I
FSM
T
J
and
T
STG
R
θJL
R
θJE
Axial Leaded
VALUE
200
400
600
800
1000
10.0
150
-65 to +175
8
4
UNIT
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TA = 25°C )
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, T
A
= 25°C)
Amps
Amps
°C
°C/W
SMS
Operating & Storage Temperature
Thermal Resistance
NOTES:
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/
I
F
= 500mA, I
R
= 1A, I
RR
= 250mA,
T
A
= 25°C
Junction to Lead for Axial, L =.125"
Junction to End Tab for Surface Mount
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00001C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR10D thru SDR10M
and
SDR10DSMS thru SDR10MSMS
Series
ELECTRICAL CHARACTERISTICS
3/
CHARACTERISTICS
Instantaneous Forward Voltage Drop
I
F
= 10.0 Adc, 300-500μs pulse
Reverse Leakage Current
Rated V
R
, 300μs pulse minimum
Junction Capacitance
V
R
= 10 Vdc, f = 1MHz, T
A
= 25°C
Reverse Recovery Time
I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
= 25°C
Package Outlines
:
DIMENSIONS (inches)
DIM.
SYMBOL
T
A
= +25°C
T
A
= -55°C
T
A
= +25°C
T
A
=+100°C
V
F1
V
F2
I
R1
I
R2
C
J
t
rr
VALUE
MAX
UNIT
1.25
1.40
5
200
80
5
Vdc
μA
pF
µs
DIMENSIONS (inches)
A
B
C
D
Minimum
---
.210
.037
1.000
Maximum
.170
.250
.043
---
DIM.
A
B
C
D
Minimum
.170
.260
.020
.002
Maximum
.180
.300
.030
---
AXIAL
SMS
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00001C
DOC
Embedded System
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