3 A, 400 V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Maker | SSDI |
| package instruction | HERMETIC SEALED PACKAGE-2 |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | METALLURGICALLY BONDED |
| application | EFFICIENCY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.35 V |
| JESD-30 code | E-XALF-W2 |
| Maximum non-repetitive peak forward current | 75 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Maximum output current | 3 A |
| Package body material | UNSPECIFIED |
| Package shape | ELLIPTICAL |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse recovery time | 0.07 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| SDR1308 | SDR1304 | SDR1304_84 | SDR1306 | SDR1305 | |
|---|---|---|---|---|---|
| Description | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE |
| Maker | SSDI | SSDI | - | SSDI | SSDI |
| package instruction | HERMETIC SEALED PACKAGE-2 | HERMETIC SEALED PACKAGE-2 | - | HERMETIC SEALED PACKAGE-2 | - |
| Contacts | 2 | 2 | - | 2 | - |
| Reach Compliance Code | compli | compli | - | compli | compli |
| ECCN code | EAR99 | EAR99 | - | EAR99 | EAR99 |
| Other features | METALLURGICALLY BONDED | METALLURGICALLY BONDED | - | METALLURGICALLY BONDED | - |
| application | EFFICIENCY | EFFICIENCY | - | EFFICIENCY | EFFICIENCY |
| Shell connection | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | - | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | - | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.35 V | 1.35 V | - | 1.35 V | 0.68 V |
| JESD-30 code | E-XALF-W2 | E-XALF-W2 | - | E-XALF-W2 | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 75 A | 75 A | - | 75 A | 75 A |
| Number of components | 1 | 1 | - | 1 | 1 |
| Phase | 1 | 1 | - | 1 | 1 |
| Number of terminals | 2 | 2 | - | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | - | 175 °C | 175 °C |
| Maximum output current | 3 A | 3 A | - | 3 A | 3 A |
| Package body material | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED | GLASS |
| Package shape | ELLIPTICAL | ELLIPTICAL | - | ELLIPTICAL | ROUND |
| Package form | LONG FORM | LONG FORM | - | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V | 400 V | - | 600 V | 400 V |
| Maximum reverse recovery time | 0.07 µs | 0.07 µs | - | 0.07 µs | 0.07 µs |
| surface mount | NO | NO | - | NO | NO |
| Terminal form | WIRE | WIRE | - | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | - | AXIAL | AXIAL |
京公网安备 11010802033920号
EEWORLD
