BSS69R datasheet, PDF - EEWORLD Datasheet

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BSS69R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BSS69R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BSS69R Parametric

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	295 ns
Maximum opening time (tons)	70 ns

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SOT23 PNP SILICON PLANAR MEDIUM

POWER SWITCHING TRANSISTORS

ISSUE 2 SEPTEMBER 1995

7

PARTMARKING DETAILS

BSS69 -

BSS70 -

BSS69R -

BSS70R -

L2

L3

L6

L7

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

TOT

t

j

:t

stg

MIN.

-40

-5

-50

-0.25

-0.40

-0.65

30

40

50

30

15

60

80

100

60

30

200

250

4.5

10

Typ. 5

35

225

70

-0.85

-0.95

BSS69

BSS70

C

B

VALUE

-40

-5

-200

-100

-50

330

-55 to +150

UNIT

V

mA

mW

°C

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)EBO

I

CES

V

CE(sat)

V

BE(sat)

h

FE

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

Collector-Emitter Breakdown Voltage V

(BR)CEO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector- Emitter Cut-off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation Voltage

Static Forward Current

Transfer Ratio

BSS69

MAX. UNIT

V

nA

V

CONDITIONS.

I

C

=-1mA

I

C

=-10µA

I

E

=-10µA

V

CES

=-30V

I

C

=-10mA, I

B

=-1mA

I

C

=-50mA, I

B

=-5mA*

I

C

=-10mA, I

B

=-1mA

I

C

=-50mA, I

B

=-5mA*

I

C

=-100µA,

I

C

=-1mA,

I

C

=-10mA, V

CE

=-1V

I

C

=-50mA*,

I

C

=-100mA*,

I

C

=-100µA,

I

C

=-1mA,

I

C

=-10mA, V

CE

=-1V

I

C

=-50mA*,

I

C

=-100mA*,

150

Static Forward Current

Transfer Ratio

BSS70

h

FE

300

Transition Frequency

Collector-Base Capacitance

Emitter-Base Capacitance

Noise Figure

BSS69

BSS70

f

T

C

obo

C

ibo

N

t

d

; t

f

t

s

t

f

MHz

pF

dB

ns

I

C

=-10mA, V

CE

=-20V

f=100MHz

V

CB

=-5V, f=100kHz

V

EB

=-0.5V, f=100kHz

I

C

=-100µΑ, V

CE

=-5V

R

S

=1kΩ, f=10Hz to15.7 kHz

V

CC

=-3V, I

C

=-10mA

I

B1

= I

B2

=-1mA

Switching times: Delay; Rise

Storage Time

Fall Time

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

PAGE NUMBER

BSS69R Related Products

	BSS69R	BSS69TA
Description	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Bipolar small signal -

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