DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification
File under Discrete Semiconductors, SC01
1997 Oct 03
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES
•
Low switching losses
•
Capability of absorbing very high
surge current
•
Fast recovery time
•
Guard ring protected
•
Plastic SMD package.
APPLICATIONS
•
Low power switched-mode power
supplies
•
Rectification
•
Polarity protection.
DESCRIPTION
page
BAT140 series
PINNING
BAT140
PIN
A
1
2
3
4
k
1
n.c.
k
2
a
1
, a
2
C
a
1
n.c.
a
2
k
1
, k
2
S
a
1
n.c.
k
2
k
1
, a
2
Fig.2
age
page
4
1
3
2 n.c.
MGL171
BAT140A diode
configuration (symbol).
4
4
1
3
2 n.c.
MGL172
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
MARKING
TYPE NUMBER
BAT140A
BAT140C
BAT140S
MARKING
CODE
AT140A
AT140C
AT140S
Fig.1
1
Top view
2
3
MSB002 - 1
Fig.3
BAT140C diode
configuration (symbol).
Simplified outline
(SOT223) and pin
configuration.
page
4
1
2 n.c.
3
MGL173
Fig.4
BAT140S diode
configuration (symbol).
1997 Oct 03
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
F(AV)
continuous reverse voltage
continuous forward current
average forward current
T
amb
= 65
°C;
R
th j-a
= 80 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
−
−
−
PARAMETER
CONDITIONS
BAT140 series
MIN.
MAX.
UNIT
40
1
1
V
A
A
I
FSM
I
RSM
T
stg
T
j
Notes
non-repetitive peak forward current t = 8.3
µs
half sinewave;
JEDEC method
non-repetitive peak reverse current t
p
= 100
µs
storage temperature
junction temperature
−
−
−65
−
10
0.5
+150
125
A
A
°C
°C
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA; note 1
I
F
= 1 A; note 1
I
R
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT223 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
100
UNIT
K/W
reverse current
diode capacitance
V
R
= 10 V; note 1; see Fig.6
V
R
= 40 V; note 1; see Fig.6
V
R
= 4 V; f = 1 MHz; see Fig.7
280
460
15
60
65
330
500
40
300
80
mV
mV
µA
µA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
1997 Oct 03
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
GRAPHICAL DATA
BAT140 series
10
4
handbook, halfpage
IF
(mA)
10
3
MLC388
10
4
handbook, halfpage
IR
(µA)
10
3
MLC389
(1)
(2)
(3)
10
2
(1)
(2)
(3)
(4)
10
2
(4)
10
10
1
0
0.2
0.4
0.6
0.8
V F (V)
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
1.0
1
0
10
20
30
V R (V) 40
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
Fig.5
Forward current as a function of forward
voltage; typical values.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
3
MLC390
Cd
(pF)
10
2
10
0
8
16
24
32 V (V) 40
R
f = 1 MHz.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
1997 Oct 03
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BAT140 series
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1997 Oct 03
5
stm32/stm8
京公网安备 11010802033920号
EEWORLD
