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SEMIX302GAL12E4S

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size129KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SEMIX302GAL12E4S Overview

Trench IGBT Modules

SEMIX302GAL12E4S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts16
Manufacturer packaging codeCASE SEMIX2S
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)463 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)681 ns
Nominal on time (ton)342 ns
VCEsat-Max2.05 V
SEMiX302GAL12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
20 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SEMiX302GAL12E4s
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
463
356
300
900
-20 ... 20
SEMiX 2s
Trench IGBT Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
356
266
300
900
1620
-40 ... 175
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
356
266
300
900
1620
-40 ... 175
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 0,5
R
Goff,main
= 0,5
R
G,X
= 2,2
R
E,X
= 0,5
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.6
1.16
1.02
1700
2.50
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAL
© by SEMIKRON
Rev. 1 – 20.02.2009
1
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