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Datasheet> All Categories > SEMIX302GB126HDS_08
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SEMIX302GB126HDS_08

Description
Trench IGBT Modules
File Size133KB，5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SEMIX302GB126HDS_08 Overview

Trench IGBT Modules

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SEMiX302GB126HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
T
j
= 125 °C
V
CES
≤
1200 V
V
GES
t
psc
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
311
218
200
400
-20 ... 20
10
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
292
202
200
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
400
1300
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
Trench IGBT Modules
SEMiX302GB126HDs
®
T
j
Inverse diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
T
j
= 150 °C
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(j-s)
per IGBT
per IGBT
I
C
= 200 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 8 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 200 A
T
j
= 125 °C
R
G on
= 2.8
Ω
R
G off
= 2.8
Ω
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
14.4
0.75
0.65
1600
3.75
320
50
30
600
100
26
0.12
T
j
= 25 °C
T
j
= 125 °C
5
1.7
2.00
1
0.9
3.5
5.5
5.8
0.1
2.1
2.45
1.2
1.1
4.5
6.8
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
Conditions
min.
typ.
max.
Unit
GB
© by SEMIKRON
Rev. 27 – 02.12.2008
1

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