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Datasheet> All Categories > Discrete semiconductor> The transistor> SEMIX302GB176HDS
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SEMIX302GB176HDS

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size150KB，5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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SEMIX302GB176HDS Overview

Trench IGBT Modules

SEMIX302GB176HDS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XUFM-X15
Contacts15
Manufacturer packaging codeCASE SEMIX 2S
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)320 A
Collector-emitter maximum voltage1700 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X15
JESD-609 codee3/e4
Number of components2
Number of terminals15
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN/SILVER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)770 ns
Nominal on time (ton)270 ns
VCEsat-Max2.45 V
Base Number Matches1

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SEMiX302GB176HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 1000 V
V
GE
≤
20 V
T
j
= 125 °C
V
CES
≤
1700 V
V
GES
t
psc
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1700
308
219
200
400
-20 ... 20
10
-55 ... 150
T
c
= 25 °C
T
c
= 80 °C
389
262
200
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
400
2000
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
Trench IGBT Modules
SEMiX302GB176HDs
®
T
j
Inverse diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
T
j
= 150 °C
Typical Applications
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(j-s)
per IGBT
per IGBT
I
C
= 200 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 8 mA
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 1200 V
I
C
= 200 A
T
j
= 125 °C
R
G on
= 6.5
Ω
R
G off
= 6.5
Ω
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
17.6
0.73
0.58
1866
3.75
225
45
130
665
105
77
0.1
T
j
= 25 °C
T
j
= 125 °C
5.2
2
2.45
1
0.9
5.0
7.8
5.8
0.1
2.45
2.9
1.2
1.1
6.3
9.0
6.4
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
Conditions
min.
typ.
max.
Unit
GB
© by SEMIKRON
Rev. 21 – 02.12.2008
1

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