SEMIX402GB066HDS_08 datasheet, PDF

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SEMIX402GB066HDS_08: DescriptionTrench IGBT Modules; File Size133KB，5 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SEMIX402GB066HDS_08 Overview

Trench IGBT Modules

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SEMiX402GB066HDs

Absolute Maximum Ratings

Symbol

IGBT

CES

Cnom

CRM

= 2xI

Cnom

= 360 V

≤

15 V

= 150 °C

CES

≤

600 V

GES

psc

= 175 °C

= 25 °C

= 80 °C

600

509

383

400

800

-20 ... 20

-40 ... 175

= 25 °C

= 80 °C

543

397

400

FRM

= 2xI

Fnom

= 10 ms, sin 180°, T

= 25 °C

800

1800

-40 ... 175

600

-40 ... 125

AC sinus 50Hz, t = 1 min

4000

µs

°C

Conditions

Values

Unit

SEMiX 2s

Trench IGBT Modules

SEMiX402GB066HDs

Inverse diode

Fnom

FRM

FSM

Module

t(RMS)

stg

isol

Preliminary Data

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V

CE(sat)

with positive temperature

coefficient

• UL recognised file no. E63532

= 175 °C

Typical Applications

• Matrix Converter

• Resonant Inverter

• Current Source Inverter

Characteristics

Symbol

IGBT

CE(sat)

CE0

GE(th)

CES

ies

oes

res

Gint

d(on)

d(off)

off

th(j-c)

th(j-s)

per IGBT

= 400 A

= 15 V

chiplevel

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 15 V

= 25 °C

= 150 °C

= 25 °C

= 150 °C

f = 1 MHz

24.7

1.54

0.73

3200

1.00

150

125

900

0.12

1.45

1.70

0.9

0.85

1.4

2.1

5.8

0.15

1.9

2.1

0.9

2.3

3.0

6.5

0.45

mΩ

Ω

K/W

Remarks

• Case temperature limited to T

=125°C

max.

• Product reliability results are valid for

=150°C

• For short circuit: Soft R

Goff

recommended

• Take care of over-voltage caused by

stray inductance

Conditions

min.

typ.

max.

Unit

, I

= 6.4 mA

= 0 V

= 600 V

= 25 V

= 0 V

= - 8 V...+ 15 V

= 25 °C

= 300 V

= 400 A

= 150 °C

G on

= 4.5

Ω

G off

= 4.5

Ω

Rev. 18 – 02.12.2008

SEMIX402GB066HDS_08 Related Products

	SEMIX402GB066HDS_08	SEMIX402GB066HDS
Description	Trench IGBT Modules	Trench IGBT Modules

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