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SEMIX553GAL128DS

Description
SPT IGBT Modules
File Size154KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SEMIX553GAL128DS Overview

SPT IGBT Modules

SEMiX553GAL128Ds
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
20 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
533
379
300
600
-20 ... 20
10
-40 ... 150
421
289
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2300
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
521
347
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2300
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
SPT IGBT Modules
SEMiX553GAL128Ds
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
4.5
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
28.3
1.86
1.17
2880
1.33
1.9
2.1
1
0.9
3.0
4.0
5
0.1
2.35
2.55
1.15
1.05
4.0
5.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAL
© by SEMIKRON
Rev. 14 – 16.12.2009
1

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