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SEMIX553GD128DC

Description
SPT IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size152KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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SEMIX553GD128DC Overview

SPT IGBT Modules

SEMIX553GD128DC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-XUFM-X29
Contacts29
Manufacturer packaging codeCASE SEMIX 33C
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)540 A
Collector-emitter maximum voltage1200 V
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X29
JESD-609 codee2
Number of components6
Number of terminals29
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)715 ns
Nominal on time (ton)250 ns
SEMiX553GD128Dc
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
20 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
533
379
300
600
-20 ... 20
10
-40 ... 150
421
289
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2300
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
SPT IGBT Modules
SEMiX553GD128Dc
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
Characteristics
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.9
2.1
1
0.9
3.0
4.0
max.
2.35
2.55
1.15
1.05
4.0
5.0
6.5
0.3
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 300 A
R
G on
= 3
R
G off
= 3
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
per IGBT
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
4.5
5
0.1
28.3
1.86
1.17
2880
1.33
185
65
27
635
80
33
0.061
K/W
GD
© by SEMIKRON
Rev. 9 – 16.12.2009
1

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