ZVP2106G datasheet, PDF - EEWORLD Datasheet

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ZVP2106G: DescriptionPOWER, FET; CategoryDiscrete semiconductor The transistor; File Size58KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVP2106G Overview

POWER, FET

ZVP2106G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-223, 4 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.45 A
Maximum drain current (ID)	0.45 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	20 pF
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2 W
Maximum pulsed drain current (IDM)	4 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	27 ns
Maximum opening time (tons)	22 ns

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ZVP2106G

D

SOT223 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

TYPICAL CHARACTERISTICS

-3.5

-2.0

ISSUE 3 MARCH 96

FEATURES

* 60 Volt V

DS

* R

DS(on)

=5Ω

V

GS

=

-10V

-9V

-8V

-7V

-6V

-3.0

V

GS=

-20V

-18V -14V

-1.8

-2.5

-1.6

S

D

G

-12V

-2.0

-1.4

-1.2

PARTMARKING DETAIL: -

COMPLEMENTARY TYPE: -

ZVP2106

ZVN2106G

-10V

-1.5

-9V

-1.0

-8V

-0.8

-1.0

-7V

-0.6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Drain-Source Breakdown

Voltage

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

-1

5

g

fs

Input Capacitance (2)

C

iss

Common Source Output

Capacitance (2)

C

oss

C

rss

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

t

d(on)

t

r

150

Forward Transconductance

(1)(2)

100

60

20

Reverse Transfer

Capacitance (2)

7

15

-60

-1.5

-3.5

20

-0.5

-100

I

DM

V

GS

P

tot

T

j

:T

stg

I

D

V

DS

SYMBOL

VALUE

-60

-450

-4

±

20

-0.5

-5V

-4V

-3.5V

0

-2

-4

-6

-8

-10

-6V

-5V

-0.4

UNIT

V

mA

A

V

2

-55 to +150

W

°C

-0.2

0

-4V

0

I

D(On)

-On-State Drain Current (Amps)

V

DS

- Drain Source

Voltage (Volts)

I

D(On)

-On-State Drain Current (Amps)

0

-10

-20

-30

-40

-50

V

DS

- Drain Source

Voltage (Volts)

Output Characteristics

Saturation Characteristics

-10

-1.6

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

MAX. UNIT CONDITIONS.

V

nA

µ

A

µ

A

-1.4

-8

-1.2

-6

V

DS=

-10V

-1.0

I

D

=-1mA, V

GS

=0V

I

D

=-1mA, V

DS

= V

GS

V

GS

=

±

20V, V

DS

=0V

V

DS

=-60 V, V

GS

=0

V

DS

=-48 V, V

GS

=0V, T=125°C

(2)

A

Ω

-0.8

-4

I

D=

-1A

-0.6

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

-2

-0.4

-0.5A

-0.2

-0.25A

0

-2

-4

-6

-8

-10

V

DS-

Drain Source

Voltage (Volts)

0

-2

-4

-6

-8

-10

I

D(On)-

On-State Drain Current (Amps)

0

V

GS-

Gate Source Voltage

(Volts)

V

GS-

Gate Source

Voltage (Volts)

V

DS

=-18 V, V

GS

=-10V

V

GS

=-10V,I

D

=-500mA

mS

pF

ns

V

DD

≈

-18V, I

D

=-500mA

V

DS

=-18V, V

GS

=0V, f=1MHz

V

DS

=-18V,I

D

=-500mA

Voltage Saturation Characteristics

Transfer Characteristics

Static Drain-Source On-State R

DS(on)

Resistance (1)

10

V

GS

=-5V

-6V

-7V -8V -9V -10V

2.6

2.4

)

on

S(

R

D

2.2

2.0

V

GS=

-10V

I

D=-

0.5A

5

1.8

1.6

-

ain

Dr

1.4

e

nc

ta

sis

Re

ce

ur

So

1.2

1.0

Normalised R

DS(on)

and V

GS(th)

0.8

-40 -20

0

Gate Thresh

old

V

GS=

V

DS

I

D=

-1mA

Voltage V

GS

(th

)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

R

DS(ON)

-Drain Source Resistance

(Ω)

1

-0.1

0.6

t

d(off)

t

f

12

15

ns

-1.0

-2.0

20 40 60 80 100 120 140 160 180

I

D

-Drain Current

(Amps)

T

j

-Junction Temperature (°C)

On-resistance v drain current

Normalised R

DS(on)

and V

GS(th)

vs Temperature

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2%

(2) Sample test.

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

3 - 426

3 - 427

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