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ZVP0545A

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size35KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVP0545A Overview

SMALL SIGNAL, FET

ZVP0545A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionTO-92, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)0.045 A
Maximum drain current (ID)0.045 A
Maximum drain-source on-resistance150 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP0545A
ISSUE 2 – MARCH 94
FEATURES
* 450 Volt V
DS
* R
DS(on)
=150Ω
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
V
DS
SYMBOL
E-Line
TO92 Compatible
VALUE
-450
-45
-400
±
20
UNIT
V
mA
mA
V
700
-55 to +150
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
40
120
20
5
10
15
15
20
-100
150
-450
-1.5
-4.5
20
-20
-2
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
mA
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-450 V, V
GS
=0
V
DS
=-360 V, V
GS
=0V,
T=125°C
(2)
mA
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-50mA
mS
pF
pF
pF
ns
ns
ns
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
2%
(2) Sample test.
3-413
V
DD
-25V, I
D
=-50mA
V
DS
=-25 V, V
GS
=0V, f=1MHz
V
DS
=-25V,I
D
=-50mA
(
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