ZVN4206A datasheet, PDF - EEWORLD Datasheet

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ZVN4206A: Description600 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; CategoryDiscrete semiconductor The transistor; File Size80KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN4206A Overview

600 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

ZVN4206A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.6 A
Maximum drain current (ID)	0.6 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	20 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – JUNE 94

FEATURES

* 60 Volt V

* R

DS(on)

= 1

Ω

ZVN4206A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

E-LINE

TO92 COMPATIBLE

VALUE

UNIT

°C

600

0.7

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

300

100

1.5

1.3

100

MAX. UNIT CONDITIONS.

µA

Ω

≈25V,

=1.5A

=25V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=60V, V

=48V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=1.5A

=5V,I

=500mA

=25V,I

=1.5A

Forward Transconductance(1)(2 g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

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