EEWORLDEEWORLDEEWORLD

Part Number

Search

ZVN4106F

Description
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size31KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZVN4106F Overview

200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZVN4106F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.2 A
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZVN4106F
ZVN4106F
S
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
D
V
GS
=3.5V
5V
6V
4V
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
4
100
V
GS
=20V
3
16V
14V
G
8V
12V
2
10V
10V
14V
20V
10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
SYMBOL
VALUE
60
0.2
3
±
20
330
-55 to +150
UNIT
V
A
A
V
mW
°C
9V
8V
I
D
- Drain Current (A)
1
7V
6V
5V
4V
0
1
0.01
0.1
1
10
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
=10V
0
2
4
6
8
10
Saturation Characteristics
R
DS(on)
- Drain Source On Resistance (Ω)
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance v Drain Current
1.8
300
I
D
=0.5A
R
DS(on)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
150
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
C
iss
C
oss
C
rss
T
d(on)
Rise Time (2)(3)
1.8
MAX. UNIT CONDITIONS.
60
1.3
3
100
10
50
1
2.5
5
V
V
nA
µA
µA
A
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
1.2
200
Normalised R
DS(on)
and V
GS(th)
0
0
0.5
1.0
2.0
1.5
gfs - Transconductance (S)
0
0.6
V
GS(th)
100
-50
0
50
100
150
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
T
j
- Junction Temperature ( °C)
I
D(on)
- Drain Current (A)
Normalised R
DS(on)
& V
GS(th)
v Temperature
I
D
=0.5A
V
DD
=20V
40V
50V
Transconductance v Drain Current
80
16
Forward Transconductance(1)(2 g
fs
)
mS
35
25
8
5
T
r
7
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
T
d(off)
T
f
6
8
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V, I
D
=250mA
60
12
40
8
V
DS
=25V, V
GS
=0V, f=1MHz
C
iss
20
4
C - Capacitance (pF)
C
oss
C
rss
0
15
0
0.6
30
45
V
GS
- Gate Source Voltage (V)
0
1.2
0
60
V
DD
≈25V,
I
D
=150mA
V
DS
- Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 400
3 - 399
ds1302 program based on msp430f149
I debugged a ds1302 program based on msp430f149 and would like to share it here....
hjl240 Microcontroller MCU
General Rules for Inspection of Purchased Components
[color=#000000][b][font=宋体]I. [/font][font=宋体]Resistors [/font][/b] [font=宋体] 1) Visual inspection: the incoming packaging should be intact and undamaged, with clear markings; [/font] [font=宋体] 2) The...
qwqwqw2088 Analogue and Mixed Signal
Learning: The most important components of the analog world - signal chain and power supply
The most important components of the analog world - signal chain and power supplyClick here to enter the topicThe signal chain is the link between the analog world and the digital world. In addition t...
EEWORLD社区 TI Technology Forum
Anyone selling TI's 48 yuan LM3S8962? I want to buy it! ~
As the title says, please contact QQ282484887 I want to buy it for study but I was not given it when I applied because I am a student....
wanghongyang Buy&Sell
Alarm clock problem!!
I am currently working on a mobile phone alarm clock program, developed using EVC. I hope to implement a periodic reminder function, such as setting an alarm on Monday, Wednesday, and Friday. I am pla...
nankeey Embedded System
An article to understand the naming of electromagnetic wave bands
We, the engineers working in communications, deal with electromagnetic waves every day, and often see names such as C-band, L-band, Ku-band, and Ka-band.Have you ever wondered where these band names c...
btty038 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2589  1333  2407  888  559  53  27  49  18  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号