ZVN3306F datasheet, PDF - EEWORLD Datasheet

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ZVN3306F: DescriptionN-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; CategoryDiscrete semiconductor The transistor; File Size79KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN3306F Overview

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN3306F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.15 A
Maximum drain current (ID)	0.15 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996

FEATURES

* R

DS(on)

= 5Ω

* 60 Volt V

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

ZVP3306F

ZVN3306F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

150

330

-55 to +150

SOT23

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage

Drain Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source

Output Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

iss

oss

rss

d(on)

d(off)

3 typ

4 typ

5 typ

150

750

0.8

2.4

0.5

MAX. UNIT CONDITIONS.

µA

Ω

≈18V,

=500mA

=18V, V

=0V, f=1MHz

=1mA, V

=0V

=1mA, V

= V

=± 20V, V

=0V

=60V, V

=0V

=48V, V

=0V, T=125°C

(2)

=18V, V

=10V

=10V, I

=500mA

=18V, I

=500mA

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

3 - 393

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