ZVN1409A datasheet, PDF - EEWORLD Datasheet

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ZVN1409A: DescriptionN-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; CategoryDiscrete semiconductor The transistor; File Size33KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVN1409A Overview

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN1409A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (Abs) (ID)	0.01 A
Maximum drain current (ID)	0.01 A
Maximum drain-source on-resistance	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.65 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZVN1409A

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

TYPICAL CHARACTERISTICS

GS=

10V

GS=

10V

ISSUE 2 – MARCH 94

FEATURES

* 90 Volt V

* Low input capacitance

* Fast switching

-Drain Current (mA)

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

tot

stg

VALUE

625

-55 to +150

UNIT

°C

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

- Drain Source

Voltage (Volts)

- Drain Source

Voltage (Volts)

Output Characteristics

Saturation Characteristics

DS=

10V

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Breakdown

Voltage

SYMBOL

DSS

GS(th)

GSS

DSS

MIN.

0.8

MAX.

UNIT

2.4

100

µA

100 (2)

µA

D(on)

CONDITIONS.

=0.1mA, V

=0V

ID=0.1mA, V

= V

=± 20V, V

=0V

24mA

18mA

12mA

DS-

Drain Source

Voltage (Volts)

-Drain Current (mA)

Gate Body Leakage

Zero Gate Voltage Drain

Current

On State Drain Current (1)

Static Drain Source On State

Resistance (1)

GS-

Gate Source Voltage

(Volts)

GS-

Gate Source

Voltage (Volts)

Voltage Saturation Characteristics

Transfer Characteristics

=90V, V

=0V

=72V, V

=0V,

T=125°C

=25 V, V

=10V

DS(on)

Input Capacitance (2)

Common Source Output

Capacitance (2)

iss

oss

rss

6.5

0.65

250

Ω

=25 V, V

=0V

f=1MHz

=10V,I

=5mA

=25V,I

=10mA

=4V 5V

6V 8V 10V

1000

)

2.4

2.2

2.0

500

1.8

Forward Transconductance (1)( g

1.6

1.4

1.2

1.0

GS=

10V

sis

5mA

-S

ain

GS=

1mA

0.8

Gate Thresh

old

0.6

Voltage V

(th

)

-Drain Source Resistance

(Ω)

100

Normalised R

DS(on)

and V

GS(th)

100

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)(4)

Rise Time (2)(3)(4)

Turn-Off Delay Time (2)(3)(4)

Fall Time (2)(3)(4)

0.4

-80 -60 -40 -20

0 20 40 60 80 100 120 140 160

d(on)

d(off)

0.3

0.5

0.35

0.5

≈25V,

=5mA

D-

Drain Current

(mA)

-Junction Temperature (C°)

On-resistance v drain current

Normalised R

DS(on)

and V

GS(th)

vs Temperature

3-359

3-358

(

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