ZVN2106A datasheet, PDF - EEWORLD Datasheet

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ZVN2106A: DescriptionSMALL SIGNAL, FET; CategoryDiscrete semiconductor The transistor; File Size49KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN2106A Overview

SMALL SIGNAL, FET

ZVN2106A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.45 A
Maximum drain current (ID)	0.45 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	20 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZVN2106A

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVN2106A

TYPICAL CHARACTERISTICS

4

2.0

ISSUE 2 – MARCH 94

FEATURES

* 60 Volt V

DS

* R

DS(on)

=2Ω

V

GS=

10V

9V

1.8

3

1.6

8V

1.4

7V

I

D=

1A

0.5A

0.25A

2

4

6

8

10

1.2

D

G

S

2

6V

1.0

0.8

1

5V

0.6

E-Line

TO92 Compatible

4V

0.4

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

DS

SYMBOL

VALUE

60

450

8

±

20

700

-55 to +150

UNIT

V

mA

A

V

mW

°C

V

DS-

Drain Source

Voltage (Volts)

0

3V

0.2

0

I

D(On)

-On-State Drain Current (Amps)

0

1

2

3

4

5

0

V

DS

- Drain Source

Voltage (Volts)

V

GS-

Gate Source Voltage

(Volts)

Saturation Characteristics

Voltage Saturation Characteristics

4

V

DS=

10V

10

3

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

I

D=

1A

0.5A

0.25A

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

60

0.8

MAX. UNIT CONDITIONS.

V

2.4

20

500

100

I

D(on)

2

V

nA

µA

A

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=60 V, V

GS

=0

V

DS

=48 V, V

GS

=0V,

T=125°C

(2)

V

DS

=18V, V

GS

=10V

2

1

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

1

0

2

3

4

5 6 7 8 9 10

20

0.1

I

D(On)

-On-State Drain Current (Amps)

R

DS(ON)

-Drain Source On-Resistance

(Ω)

0

1

2

3

4

5

6

7

8

9

10

1

V

GS-

Gate Source

Voltage (Volts)

V

GS

-Gate Source Voltage

(Volts)

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Transfer Characteristics

On-resistance v gate-source voltage

R

DS(on)

g

fs

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

1

2

3

4

5

2.4

0.7

2

300

C

iss

C

oss

C

rss

75

45

20

Ω

mS

pF

V

GS

=10V,I

D

=1A

V

DS

=18V,I

D

=1A

2.2

2.0

)

on

S(

0.6

1.8

V

DS=

10V

0.5

1.6

0.4

1.4

1.2

0.3

V

DS

=18 V, V

GS

=0V, f=1MHz

1.0

0.8

D

eR

nc

ta

sis

Re

V

GS=

10V

e

rc

I

D=

1A

ou

-S

ain

Dr

V

GS=

V

DS

I

D=

1mA

0.2

g

fs

-Transconductance (S)

0.6

Gate Thresh

old

0.1

Normalised R

DS(on)

and V

GS(th)

Voltage V

GS

(th

)

0.4

-80 -60 -40 -20

0

0 20 40 60 80 100 120 140 160

0

T

j

-Junction Temperature (C°)

I

D

- Drain Current (Amps)

Normalised R

DS(on)

and V

GS(th)

vs Temperature

Transconductance v drain current

3-362

3-361

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