ZVN0124A datasheet, PDF - EEWORLD Datasheet

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ZVN0124A: Description160 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size34KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN0124A Overview

160 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZVN0124A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (Abs) (ID)	0.16 A
Maximum drain current (ID)	0.16 A
Maximum drain-source on-resistance	16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZVN0124A

ISSUE 1 – MARCH 94

FEATURES

* 240 Volt V

DS

* R

DS(on)

=16Ω

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

TYPICAL CHARACTERISTICS

2.0

V

GS=

10V

7V

5V

4V

1.0

1.8

80µs pulse

1.6

0.8

1.4

APPLICATIONS

* Telephone handsets

D

G

1.2

3V

V

GS=

10V

8V

6V

5V

0.6

S

1.0

0.8

4V

0.4

E-Line

TO92 Compatible

0.6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

2V

0.4

3V

0.2

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

240

160

2

±

20

700

-55 to +150

UNIT

V

mA

A

V

mW

°C

2V

I

D(ON)

On State Drain Current(Amps)

0

2

4

6

8

10

0

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

DS-

Drain Source Voltage

(Volts)

V

DS-

Drain Source Voltage

(Volts)

Output Characteristics

I

D(on) -

On -State Drain Current (Amps)

0

20

40

60

80

100

Saturation Characteristics

20

2.0

18

1.8

16

V

DS=

25V

V

DS=

10V

1.6

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

2

4

6

8

10

14

1.4

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

240

1

MAX.

UNIT CONDITIONS.

V

3

20

10

100

I

D(on)

500

V

nA

µA

mA

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=240 V, V

GS

=0

V

DS

=192 V, V

GS

=0V,

T=125°C

(2)

V

DS

=25 V, V

GS

=10V

12

10

I

D=

1A

1.2

1.0

8

0.8

6

0.6

V

DS-

Drain Source

(Volts)

4

500mA

0.4

2

0.2

0

100mA

I

D(ON) -

On-State Drain Current (Amps)

0

2

4

6

8

10

0

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

V

GS

-Gate Source Voltage

(Volts)

V

GS

-Gate Source Voltage

(Volts)

Voltage Saturation Characteristics

Transfer Characteristics

Static Drain-Source On-State R

DS(on)

Resistance (1)

n)

(o

DS

16

g

fs

Input Capacitance (2)

C

iss

C

oss

C

rss

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

100

85

20

7

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

t

d(on)

t

r

t

d(off)

Fall Time (2)(3)

t

f

7

8

16

8

Ω

mS

pF

ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

V

GS

=10V,I

D

=250mA

V

DS

=25V,I

D

=250mA

100

R

2.4

2.2

ce

an

st

si

Forward Transconductance

(1)(2)

2.0

Re

1.8

V

GS=

10V

I

D=

0.25A

10

I

D=

1A

e

rc

ou

-S

n

ai

Dr

1.6

V

DS

=25 V, V

GS

=0V, f=1MHz

1.4

500mA

I00mA

1.2

1.0

0.8

Gate Threshol

d

V

GS=

V

DS

I

D=

1mA

0.6

-60 -40 -20

Voltage V

GS

(th)

Normalised R

DS(on)

and V

GS(th)

1

R

DS(ON)

-Drain Source Resistance

(Ω)

1

10

20

0.4

0

0 20 40 60 80 100 120 140 160

V

DD

≈25V,

I

D

=250mA

V

GS

-Gate Source Voltage

(Volts)

Temperature (°C)

On-resistance vs gate-source voltage

Normalised R

DS(on)

and V

GS(th)

V Temperature

3-351

3-350

(

3

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