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IRKHF200-12FJ

Description
Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size55KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKHF200-12FJ Overview

Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element

IRKHF200-12FJ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PXFM-X5
Reach Compliance Codecompliant
Other featuresFAST
Shell connectionISOLATED
Nominal circuit commutation break time25 µs
ConfigurationSINGLE WITH BUILT-IN SERIES DIODE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current600 mA
JESD-30 codeR-PXFM-X5
JESD-609 codee0
Maximum leakage current30 mA
On-state non-repetitive peak current8000 A
Number of components1
Number of terminals5
Maximum on-state current200000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current314 A
Maximum repetitive peak off-state leakage current30000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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