Agilent MSA-0336
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 2.7 GHz
Description
The MSA-0336 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
industrial and military applications.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
36 micro-X Package
• 12.0 dB Typical Gain at
1.0 GHz
• 10.0 dBm Typical P
1 dB
at
1.0 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
• Lead-free Option Available
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5 V
2
2
MSA-0336 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
[4]
Absolute Maximum
[1]
80 mA
425 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,5]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.7 mW/°C for T
C
> 136°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 1.6 GHz
Units
dB
dB
GHz
Min.
11.5
Typ.
12.5
±0.6
2.7
1.6:1
1.7:1
Max.
13.5
±1.0
dB
dBm
dBm
psec
V
mV/°C
4.5
6.0
10.0
23.0
125
5.0
–8.0
5.5
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0336-BLK
MSA-0336-BLKG
MSA-0336-TR1
MSA-0336-TR1G
No. of Devices
100
100
1000
1000
Comments
Bulk
Bulk
7" Reel
7" Reel
Note:
Order part number with a “G” suffix if lead-free option
is desired.
3
MSA-0336 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.05
.05
.04
.04
.03
.02
.03
.08
.14
.21
.27
.31
.37
.51
177
170
161
156
149
154
–104
–136
–157
–176
170
157
125
87
12.6
12.5
12.5
12.4
12.2
12.1
11.6
10.9
10.0
9.0
7.9
6.9
4.9
2.8
4.25
4.24
4.20
4.15
4.09
4.02
3.79
3.49
3.16
2.81
2.49
2.20
1.76
1.38
175
170
160
151
142
132
109
87
71
53
36
20
–10
–38
–18.6
–18.3
–18.3
–18.3
–17.9
–17.6
–16.8
–15.7
–14.9
–14.6
–13.9
–13.6
–12.9
–12.8
.118
.121
.122
.121
.128
.131
.145
.164
.180
.187
.202
.209
.226
.230
1
2
3
5
8
9
13
11
13
8
4
–1
–12
–25
.17
.17
.17
.18
.19
.20
.20
.21
.23
.24
.25
.24
.20
.22
–8
–17
–33
–47
–61
–73
–102
–133
–155
–173
178
177
165
130
Typical Performance, T
A
= 25°C
(unless otherwise noted)
14
12
Gain Flat to DC
10
60
T
C
= +125°C
50 T
C
= +25°C
T
C
= –55°C
40
30
20
10
0
0.1
0.3 0.5
1.0
3.0
6.0
0
1
2
3
V
d
(V)
4
5
6
FREQUENCY (GHz)
6
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
15
20
25
30
I
d
(mA)
35
40
50
14
12
G
p
(dB)
8
6
4
2
0
G
p
(dB)
I
d
= 50 mA
I
d
(mA)
10
8
4
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G
p
(dB)
13
12
11
G
P
11
18
15
7.0
P
1 dB
(dBm)
10
P
1 dB
9
8
7
P
1 dB
(dBm)
6.5
12
9
I
d
= 35 mA
6
5.5
NF (dB)
6.0
NF (dB)
6
NF
5
4
–55
–25
+25
+85
+125
I
d
= 20 mA
0
0.1
0.2 0.3
3
5.0
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
DRAIN
GATE 1
3
0.508
(0.020)
2.11 (0.083) DIA.
SOURCE
1.45
±
0.25
(0.057
±
0.010)
2
2.54
(0.100)
0.15
±
0.05
(0.006
±
0.002)
0.56
(0.022)
4.57
±
0.25
0.180
±
0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx =
±
0.005
mm .xx =
±
0.13
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
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0120-61-1280(Domestic Only)
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Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5988-4737EN
April 4, 2005
5989-2739EN
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