MGA-72543
PHEMT* Low Noise Amplifier with Bypass Switch
Data Sheet
Description
Avago’s MGA-72543 is an economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA),which is designed for an
adaptive CDMA receiver LNA and adaptive CDMA transmit
driver amplifier.
The MGA-72543 features a minimum noise figure of 1.4 dB
and 14 dB associated gain from a single stage, feedback
FET amplifier. The output is internally matched to 50Ω.
The input is optimally internally matched for lowest noise
figure into 50Ω. The input may be additionally externally
matched for low VSWR through the addition of a single
series inductor. When set into the bypass mode,both input
and output are internally matched to 50Ω.
The MGA-72543 offers an integrated solution of LNA with
adjustable IIP
3
. The IIP
3
can be fixed to a desired current
level for the receiver’s linearity requirements. The LNA has
a bypass switch function,which sets the current to zero
and provides low insertion loss. The bypass mode also
boosts dynamic range when high level signal is being
received.
For the CDMA driver amplifier applications, the MGA-
72543 provides suitable gain and linearity to meet the
ACPR requirements when the handset transmits the
highest power. When transmitting lower power, the MGA-
72543 can be bypassed, saving the drawing current.
The MGA-72543 is a GaAs MMIC, processed on Avago’s
cost effective PHEMT (Pseudomorphic High Electron Mo-
bility Transistor). It is housed in the SOT343 (SC70 4-lead)
package, and is part of the Avago Technologies CDMAd-
vantage RF chipset.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
Lead-free Option Available
Operating Frequency: 0.1 GHz ~ 6.0 GHz
Noise Figure: 1.4 dB at 2 GHz
Gain: 14 dB at 2 GHz
Bypass Switch on Chip Loss = -2.5 dB (Id <5 μA)
IIP3 = +35 dBm
Adjustable Input IP3: +2 to +14 dBm
2.7 V to 4.2 V Operation
Very Small Surface Mount Package
Applications
CDMA (IS-95, J-STD-008) Receiver LNA Transmit
Driver Amp
TDMA (IS-136)Handsets
Surface Mount Package
SOT-343 (SC-70)
Pin Connections and Package Marking
3
INPUT
& V
ref
4
GND
1
Package marking is 3 characters. The last
character represents date code.
72x
GND
2
OUTPUT
& V
d
*Pseudomorphic High Electron Mobility Transistor
MGA-72543 Absolute Maximum Ratings
[1]
Symbol
V
d
V
ref
I
d
P
d
P
in
T
j
T
STG
Parameter
Maximum Input to Output Voltage
Maximum Input to Ground DC Voltage
Supply Current
Power Dissipation
[2,3]
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum
5.5
+0.3
-5.5
70
300
+20
170
-65 to +150
Operation
Maximum
4.2
+0.1
-4.2
60
250
+13
150
-40 to +85
Thermal Resistance:
[2]
jc
= 200°C/W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Tcase = 25°C.
Simplified Schematic
Functional Block Diagram
RF IN
Input
&
V
ref
Control
Output
& V
d
SW & Bias Control
GND
RF OUT
GainFET
GND
2
MGA-72543 Electrical Specifications
T
c
= +25°C, Z
o
= 50Ω, I
d
= 20 mA, V
d
= 3V, unless noted.
Symbol
Vc
[1,3]
NF test
[1]
G
a
test
[1]
IIP
3
test
[1]
IL test
[1]
Ig test
[1]
NF
o[2]
Parameters and Test Conditions
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.04 GHz
f = 2.0 GHz
f = 2.0 GHz
V
d
= 3.0V (V
ds
= 2.5V)
V
d
= 3.0V (= V
ds
+ Vc)
V
d
= 3.0V (= V
ds
+ Vc)
V
d
= 3.0V (= V
ds
+ Vc)
V
d
= 3.0V (V
ds
= 0V, V
c
= 3V)
V
d
= 3.0V (V
ds
= 0V, V
c
= 3V)
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 0.0 mA
I
d
= 0.0 mA
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
I
d
= 30 mA
I
d
= 40 mA
I
d
= 20 mA
I
d
= 30 mA
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
Units
V
dB
dB
dB
dB
μA
dB
Min.
0.37
Typ.
0.51
1.5
Max.
0.65
1.8
15.5
0.035
0.06
0.13
0.67
13.5
8.5
14.4
10.5
2.5
2.0
1.35
1.38
1.42
1.45
1.54
1.70
14.8
14.2
13.6
13.0
11.2
9.2
+15.3
+3.2
+8.3
+11.2
+14.9
+17.1
+35
+3.5
+6.2
+10.5
+12.1
+14.8
-55
-60
-57
-60
10.2
19.5
-23.2
3.5
0.01
2.0
Minimum Noise Figure
As measured in Figure 2 Test Circuit
(opt computed from s-parameter and
noise parameter performance as
measured in a 50Ω impedance fixture)
Associated Gain at Nfo
As measured in Figure 2 Test Circuit
(opt computed from s-parameter and
noise parameter performance as
measured in a 50Ω impedance fixture)
Output Power at 1 dB Gain Compression
As measured in Figure 1 Test Circuit.
Frequency = 2.04 GHz
0.04
G
a[2]
dB
0.11
P
1dB[1]
dBm
0.52
IIP
3[1]
Input Third Order Intercept Point
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
dBm
0.67
ACP
Adjacent Channel Power Rejection,
f = 2 GHZ, offset = 1.25 MHz, Pout = 10 dBm
(CDMA modulation scheme)
f = 800 MHz, offset = 900 KHz, Pout = 8 dBm
As measured in Figure 1 Test Circuit
Input Return Loss as measured in Fig. 1
Output Return Loss as measured in Fig. 1
Isolation |S
12
|
2
as measured in Fig. 2
dBc
RL
in[1]
RL
out[1]
ISOL
[1]
dB
dB
dB
0.22
1.1
0.16
Notes:
1. Standard Deviation and Typical Data as measured in the test circuit in Figure 1. Data based at least 500 part sample size and 3 wafer lots.
2. Typical data computed from s-parameter and noise parameter data measured in a 50É∂ system. Data based on 40 parts from 3 wafer lots.
3. Vc = -Vref test
960 pF
RF
Input
2.7 nH
50 pF
V
ref
1000 W
4
2
V
d
56 pF
RF
Input
Bias Tee
ICM Fixture
V
d
72x
72x
3
1
18 nH
RF
Output
56 p F
V
ref
Bias
Tee
RF
Output
Figure 1. MGA-72543 Production Test Circuit.
3
Figure 2. MGA-72543 Test Circuit for S, Noise, and Power Parameters Over
Frequency.
MGA-72543 Typical Performance,
T
c
= 25°C, Z
o
= 50, V
d
= 3V, I
d
= 20 mA unless stated otherwise. All data as measured in
Figure 2 test circuit (Input & Output presented to 50Ω).
2.2
2
1.8
18
15
18
15
NF (dB)
1.6
1.4
1.2
1
2.7 V
3.0 V
3.3 V
0
1
2
3
4
5
6
G
a
(dB)
9
6
3
0
-3
0
1
2
3
4
2.7 V
3.0 V
3.3 V
5
6
INPUT IP
3
(dBm)
12
12
9
6
3
0
-3
0
1
2
3
4
2.7 V
3.0 V
3.3 V
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Minimum Noise Figure vs.
Frequency and Voltage.
Figure 4. Associated Gain with F
min
vs. Frequency and Voltage.
Figure 5. Input Third Order Intercept
Point vs. Frequency and Voltage.
2.2
2
1.8
-40 C
+22 C
+85 C
18
15
18
15
G
a
(dB)
9
6
3
0
-40 C
+22 C
+85 C
0
1
2
3
4
5
6
INPUT IP
3
(dBm)
12
12
9
6
3
0
-3
0
1
2
3
4
-40 C
+25 C
+85 C
5
6
NF (dB)
1.6
1.4
1.2
1
0
1
2
3
4
5
6
-3
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs.
Frequency and Temperature.
Figure 7. Associated Gain with F
min
vs. Frequency and Temperature.
Figure 8. Input Third Order Intercept
Point vs. Frequency and Temperature.
5
In (LNA)
Out (LNA)
5
In (Swt)
Out (Swt)
0
3
VSWR (Bypass Switch)
3
INSERTION LOSS (dB)
4
4
-1
VSWR (LNA)
-2
2
2
-3
-40 C
+25 C
+85 C
1
0
1
2
3
4
5
6
1
0
1
2
3
4
5
6
-4
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR
vs. Frequency.
Figure 10. LNA off (Switch on) VSWR
vs. Frequency.
Figure 11. Insertion Loss (Switch on)
vs. Frequency and Temperature.
4
MGA-72543 Typical Performance,
continued, T
c
= 25°C, Z
o
= 50, V
d
= 3V, I
d
= 20 mA, Frequency = 2 GHz, unless stated oth-
erwise. All data as measured in Figure 2 test circuit (Input & Output presented to 50Ω).
18
15
18
15
18
15
1 dB COMPRESSION (dBm)
9
6
3
0
-3
0
1
2
3
4
2.7 V
3.0 V
3.3 V
5
6
9
6
3
0
-3
0
1
2
3
4
-40 C
+25 C
+85 C
5
6
INPUT IP
3
(dBm)
12
1 dB COMPRESSION (dBm)
12
12
9
6
3
0
-3
0
1
2
3
4
10 mA
20 mA
40 mA
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Output Power at 1 dB Compression
vs. Frequency and Voltage.
Figure 13. Output Power at 1 dB Compression
vs. Frequency and Temperature.
Figure 14. Input Third Order Intercept
Point vs. Frequency and Current.
2.6
2.4
2.2
-40 C
+25 C
+85 C
18
15
21
18
G
a
(dBm)
NF (dB)
2.0
1.8
1.6
1.4
1.2
1.0
0
20
40
60
80
9
6
3
0
-3
-40 C
+25 C
+85 C
0
20
40
I
d
CURRENT (mA)
60
80
INPUT IP
3
(dBm)
12
15
12
9
6
3
0
-40 C
+25 C
+85 C
0
20
40
60
80
I
d
CURRENT (mA)
I
d
CURRENT (mA)
Figure 15. Minimum Noise Figure vs.
Current and Temperature.
Figure 16. Associated Gain (Fmin)
vs. Current and Temperature.
Figure 17. Input Third Order Intercept
Point vs. Current and Temperature.
18
15
5
1
1 dB Compression (dBm)
12
4
0.8
VSWR
9
6
3
0
-3
-40 C
+25 C
+85 C
0
20
40
I
d
CURRENT (mA)
60
80
3
Gamma
Input
Output
2
0.2
1
0
V ref (V)
0.6
0.4
-40 C
+25 C
+85 C
0
20
40
I
d
CURRENT (mA)
60
80
0
20
40
I
d
CURRENT (mA)
60
80
Figure 18. Output Power at 1 dB Compression
vs. Current and Temperature.
Figure 19. Input and Output VSWR
and VSWR of |
opt
| vs. Current.
Figure 20. V
ref
vs. Current and Temperature.
5
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