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BR100/03T/R

Description
DIAC, 36V V(BO) Max
CategoryAnalog mixed-signal IC    Trigger device   
File Size14KB,3 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BR100/03T/R Overview

DIAC, 36V V(BO) Max

BR100/03T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
Maximum breakover voltage36 V
JESD-609 codee3
Maximum operating temperature100 °C
Repeated peak reverse voltage3 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeDIAC
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
V
O
I
FRM
PARAMETER
Breakover voltage
Output voltage
Repetitive peak forward current
MIN.
28
7
-
MAX.
36
-
2
UNIT
V
V
A
OUTLINE - SOD27
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
I
FRM
P
tot
T
stg
T
j
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
CONDITIONS
t
10
µs,
T
a
50˚C; f = 60 Hz
T
a
= 50˚C
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
R
th j-lead
PARAMETER
CONDITIONS
MIN.
-
-
TYP.
330
150
MAX. UNIT
-
-
K/W
K/W
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
CHARACTERISTICS
T
a
= 25 ˚C unless otherwise stated.
SYMBOL
V
(BO)
|V
(BO)+
| - |V
(BO)-
|
V
O
I
(BO)
dV
(BO)
/dT
t
r
PARAMETER
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V
(BO)
Risetime
CONDITIONS
I = I
(BO)
I = I
(BO)
, see fig: 1
R
L
= 20
Ω;
Circuit of fig: 2
V = V
(BO)
I
p
= 0.5 A; Circuit of fig: 2
MIN.
28
-
7
-
-
-
TYP.
32
-
-
-
0.1
1.5
MAX. UNIT
36
3.5
-
50
-
V
V
V
µA
%/K
µs
February 1996
1
Rev 1.100
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