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ZUMD70-05

Description
0.015 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size23KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZUMD70-05 Overview

0.015 A, 2 ELEMENT, SILICON, SIGNAL DIODE

ZUMD70-05 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.41 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.015 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.33 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
SOT323 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998
.

7

ZUMD70-04
ZUMD70-05
3
2
!
!
1
SERIES PAIR
Device Type:
ZUMD70-04
Partmarking Detail:
D94
COMMON CATHODE
Device Type:
ZUMD70-05
Partmarking Detail:
D95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Forward Current
Capacitance
Effective Minority Lifetime
(1)
(1) Sample Test
SYMBOL
V
BR
I
R
V
F
I
F
C
T
τ
15
2.0
100
MIN.
70
200
410
MAX.
UNIT
V
nA
mV
mA
pF
ps
CONDITIONS.
I
R
=10µA
V
R
=50V
I
F
=1mA
V
F
=1V
f=1MHz, V
R
=0
f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
For typical characteristics graphs see ZC2800E datasheet.

ZUMD70-05 Related Products

ZUMD70-05 ZUMD70-04
Description 0.015 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.015 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.41 V 0.41 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.015 A 0.015 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.33 W 0.33 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 70 V 70 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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