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ZTX957

Description
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size61KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX957 Overview

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

ZTX957 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionTO-92 COMPATIBLE, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)85 MHz
VCEsat-Max0.2 V
ZTX957
ZTX957
MAX.
-850
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
V
CB
=-20V, f=1MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
mV
IC=-1A, V
CE
=-10V*
UNIT
CONDITIONS.
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-2A, V
CE
=-10V*
V
BE(on)
-710
Static Forward
Current Transfer Ratio
h
FE
ISSUE 3 – JUNE 94
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteritics up to 1 Amp
* Spice model available
C
B
E
100
100
90
200
200
170
10
Transition Frequency
f
T
85
Output Capacitance
C
obo
23
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
-330
-300
-6
-2
-1
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
108
2500
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
MIN.
-330
-330
TYP.
-440
-440
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
1K
-300
-6
-400
-8
V
V
I
C
=-10mA*
I
E
=-100
µ
A
4.0
t
1
D=t
1
/t
P
150
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
0.1
1
10
100
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
50
1.0
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
Amb
ient t
emp
eratu
0.001
0.01
re
I
CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
CER
R
1K
I
EBO
V
CE(sat)
V
BE(sat)
3-327
-60
-100
-140
-870
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
-50
-1
-50
-1
-10
-100
-150
-200
-1000
µ
A
nA
nA
µ
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
nA
mV
mV
mV
mV
V
EB
=-6V
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-1A, I
B
=-300mA*
I
C
=-1A, I
B
=-300mA*
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-328
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