Agilent MSA-2543
Cascadable Silicon Bipolar
Gain Block MMIC Amplifier
Data Sheet
Applications
• Cellular/PCS/WLL basestations
• Wireless data/ WLAN
• Fiber-optic systems
• ISM
Description
Agilent Technologies’ MSA-2543 is
a low current silicon gain block
MMIC amplifier housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package.
Providing a nominal 13.8 dB gain
at up to 0 dBm Pout, this device is
ideal for small-signal gain stages
or IF amplification.
The Darlington feedback structure
provides inherent broad band-
width performance. The 25 GHz f
t
fabrication process results in a
device with low current draw and
useful operation to past 3 GHz.
Typical Biasing Configuration
V
CC
=
5
V
R
c
C
bypass
Features
• Small signal gain amplifier
• Low current draw
• Wide bandwidth
• 50 Ohms input & output
• Low cost surface mount
small plastic package SOT-343
(4 lead SC-70)
• Tape-and-reel packaging option
available
• General purpose gain block
amplifier
Surface Mount Package
SOT-343/4-lead SC70
Pin Connections and
Package Marking
Specifications
2 GHz; 5V, 12 mA (typ.)
• 13.8 dB associated gain
GROUND
RF OUT/BIAS
GROUND
25x
• 0 dBm P1dB
• 9 dBm P1dB at 30 mA
• 4.5 dB noise figure
• 13 dBm output IP3
C
block
MSA
RFin
RFC
C
block
IN
Note:
Top View. Package marking provides
orientation and identification. ‘x’ is a character
to identify date code.
OUT
V
d
= 3.3 V
• Useful gain past 3 GHz
1
MSA-2543 Absolute Maximum Ratings
[1]
Symbol
I
d
P
diss
P
in max.
T
Jmax
T
STG
θ
jc
Parameter
Device Current
Total Power Dissipation
[2]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance
[3]
Units
mA
mW
dBm
°C
°C
°C/W
Absolute Maximum
40
140
13
150
-65 to 150
139
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Ground lead temperature is 25°C. Derate
7.4 mW/°C for T
L
> 131°C.
3. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Electrical Specifications
T
A
= +25°C, I
d
= 12 mA, Z
O
= 50Ω, RF parameters measured in a test circuit for a typical device
Symbol
V
d
G
P
∆G
P
F
3dB
VSWR
in
VSWR
out
NF
P
1dB
OIP
3
DV/dT
Parameter and Test Condition
Device Voltage
Power Gain (|S21|
2
)
Gain Flatness
3 dB Bandwidth
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
Output Power at 1 dB Gain Compression
Output Third Order Intercept Point
Device Voltage Temperature Coefficient
Frequency
Units
V
Min.
2.9
13
Typ.
[1]
3.3
15
13.8
±0.55
3
2:1
1.7:1
Max.
3.8
15
σ
0.02
0.3
0.2
900 MHz
2 GHz
0.1 to 2 GHz
dB
dB
GHz
0.1 to 2.5 GHz
0.1 to 6 GHz
900 MHz
2 GHz
900 MHz
2 GHz
900 MHz
2 GHz
dB
dBm
dBm
mV/°C
4.5
4.5
0.4
0.2
13
13
-3.4
0.14
0.11
0.1
0.1
0.4
0.4
Notes:
1. Typical value determined from a sample size of 500 parts from 6 wafers.
2. Standard deviation is based on 500 samples taken from 6 different wafers. Future wafers allocated to this product may have typical values
anywhere between the minimum and maximum specification limits.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
DUT
50 Ohm
Transmission Line
Including Bias T
(1.05 dB loss)
Output
Block diagram of 2 GHz production test board used for gain measurements. Circuit losses have been de-embedded from actual measurements.
2
MSA-2543 Typical Performance
35
30
6.0
25
I
d
(mA)
6.5
18
16
14
12
GAIN (dB)
20
15
10
5
0
3
3.2
3.4
V
d
(V)
3.6
3.8
-40°C
+25°C
+85°C
NF (dB)
5.5
10
8
6
5.0
4.5
4
2
4.0
0
2
4
6 1
8
10
2
FREQUENCY (GHz)
0
0
2
4
6 1
8
10
2
FREQUENCY (GHz)
Figure 1. I
d
vs. V
d
and Temperature.
Figure 2. NF vs. Frequency at I
d
= 12 mA.
Figure 3. Gain vs. Frequency at I
d
= 12 mA.
2.0
16.5
16.0
5.2
5.0
0
15.5
15.0
4.8
NF (dB)
GAIN (dB)
-40°C
+25°C
+85°C
-2.0
P
1dB
14.5
14.0
13.5
4.6
4.4
-4.0
-6.0
13.0
12.5
-40°C
+25°C
+85°C
4.2
4.0
-8.0
0
2
4
6 1
8
10
2
FREQUENCY (GHz)
12.0
0
5
10
15
20
3
25
30
5
I
d
(mA)
0
10
20 4
I
d
(mA)
30
0
Figure 4. P
1dB
vs. Frequency at
I
d
= 12 mA.
Figure 5. Gain vs. I
d
and Temperature at 2 GHz.
Figure 6. NF vs. I
d
vs. Temperature at 2 GHz.
12
10
8
P
1dB
(dBm)
NF (dBm)
7.0
10 GHz
15
0.1 GHz
0.9 GHz
1.9 GHz
2 GHz
2.4 GHz
6.5
9 GHz
10
P
1dB
(dBm)
6
4
2
0
-2
-4
0
10
20 4
I
d
(mA)
30
0
-40°C
+25°C
+85°C
6.0
8 GHz
5
4 GHz
5.5
5.0
4.5
4.0
0
5
10
15
20
3
25
7 GHz
5.8 GHz
2.4 GHz
1.9 GHz
0.9 GHz
0.1 GHz
0
-5
5.8 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-10
30
5
0
5
10
15
20
3
25
30
5
I
d
(mA)
I
d
(mA)
Figure 7. P
1dB
vs. I
d
and Temperature at 2 GHz.
Figure 8. NF vs. I
d
and Frequency.
Figure 9. P
1dB
vs. I
d
and Frequency.
3
MSA-2543 Typical Performance,
continued
20
0.1 GHz
0.9 GHz
0
0
-5
16
1.9 GHz
2.4 GHz
-10
-10
ORL (dB)
12 mA
20 mA
30 mA
GAIN (dB)
IRL (dB)
12
5.8 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-20
-15
-20
8
4
-30
-25
-30
12 mA
20 mA
30 mA
0
0
10
20 4
I
d
(mA)
30
0
-40
0
2
4
16
8
0
FREQUENCY (GHz)
0
2
4
16
8
0
FREQUENCY (GHz)
Figure 10. Gain vs. I
d
and Frequency.
Figure 11. Input Return Loss vs. Frequency
and Bias.
Figure 12. Output Return Loss vs. Frequency
and Bias.
MSA-2543 Typical Scattering Parameters
T
A
= 25°C, I
d
= 12 mA
Freq
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
s
11
Mag
0.12
0.18
0.24
0.27
0.31
0.34
0.36
0.37
0.38
0.38
0.37
0.36
0.35
0.32
0.30
0.26
0.23
0.19
0.16
0.16
0.17
s
11
Ang
0.3
11.4
13.9
5.2
-1.6
-15.4
-23.9
-34.3
-45.1
-54.0
-65.1
-74.1
-84.8
-96.3
-106.4
-117.3
-129.4
-148.9
-170.2
158.6
128.0
s
21
(dB)
14.54
14.78
14.70
14.25
13.69
13.04
12.48
11.77
11.11
10.63
10.04
9.64
9.21
8.78
8.42
8.09
7.81
7.45
7.12
6.71
6.28
s
21
(Mag)
5.33
5.48
5.44
5.16
4.83
4.49
4.21
3.88
3.59
3.40
3.18
3.04
2.89
2.75
2.64
2.54
2.46
2.36
2.27
2.17
2.06
s
21
(Ang)
173.9
160.2
140.3
121.9
108.2
97.1
85.0
71.1
58.3
48.0
35.7
26.1
14.6
3.1
-6.5
-17.4
-26.8
-38.4
-48.2
-59.9
-71.8
s
12
(dB)
-19.60
-19.71
-19.70
-19.75
-19.82
-19.81
-19.73
-19.74
-19.81
-19.89
-19.94
-20.00
-20.14
-20.13
-20.07
-19.94
-19.76
-19.31
-18.85
-18.27
-17.58
s
12
(Mag)
0.105
0.103
0.104
0.103
0.102
0.102
0.103
0.103
0.102
0.101
0.101
0.100
0.098
0.098
0.099
0.101
0.103
0.108
0.114
0.122
0.132
s
12
(Ang)
-0.3
-2.6
-5.6
-8.1
-9.5
-12.4
-14.4
-17.4
-20.7
-23.4
-26.5
-29.1
-31.2
-32.8
-34.4
-36.4
-37.5
-39.2
-41.3
-43.5
-46.8
s
22
(Mag)
0.18
0.19
0.20
0.21
0.22
0.22
0.22
0.23
0.23
0.23
0.22
0.22
0.20
0.18
0.15
0.13
0.11
0.09
0.08
0.10
0.12
s
22
(Ang)
-1.3
-8.2
-12.1
-21.2
-27.9
-32.6
-37.8
-44.8
-51.1
-57.2
-65.2
-72.0
-80.7
-91.8
-100.5
-114.7
-130.7
-160.9
171.1
140.8
115.2
K
1.15
1.14
1.12
1.14
1.16
1.20
1.22
1.28
1.35
1.41
1.50
1.58
1.69
1.79
1.88
1.95
2.00
2.01
1.99
1.95
1.87
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead.
The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
4
MSA-2543 Typical Scattering Parameters
T
A
= 25°C, I
d
= 20 mA
Freq
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
s
11
Mag
0.07
0.13
0.19
0.25
0.29
0.33
0.35
0.37
0.37
0.37
0.37
0.36
0.34
0.32
0.29
0.26
0.23
0.18
0.15
0.14
0.15
s
11
Ang
19.2
36.9
35.7
17.4
4.6
-3.1
-14.1
-26.1
-37.9
-47.3
-58.7
-67.9
-78.9
-90.2
-99.9
-110.5
-122.0
-140.8
-162.0
164.6
131.8
s
21
(dB)
17.12
17.05
16.68
15.92
15.10
14.26
13.52
12.67
11.91
11.36
10.72
10.29
9.80
9.35
8.99
8.65
8.36
7.99
7.67
7.26
6.85
s
21
(Mag)
7.18
7.12
6.82
6.25
5.69
5.16
4.74
4.30
3.94
3.70
3.44
3.27
3.09
2.94
2.81
2.71
2.62
2.51
2.42
2.31
2.20
s
21
(Ang)
173.6
158.6
137.4
118.0
103.8
92.8
80.9
67.6
55.1
45.2
33.4
24.0
12.8
1.6
-7.7
-18.3
-27.6
-39.1
-48.8
-60.4
-72.1
s
12
(dB)
-20.47
-20.52
-20.44
-20.29
-20.21
-20.08
-20.01
-19.97
-19.92
-19.99
-19.99
-20.04
-20.12
-20.04
-19.95
-19.75
-19.51
-19.00
-18.59
-17.92
-17.19
s
12
(Mag)
0.095
0.094
0.095
0.097
0.098
0.099
0.100
0.100
0.101
0.100
0.100
0.100
0.099
0.100
0.101
0.103
0.106
0.112
0.118
0.127
0.138
s
12
(Ang)
-0.7
-1.8
-3.4
-5.3
-6.9
-8.7
-11.2
-14.4
-17.9
-20.5
-23.4
-25.7
-28.2
-30.1
-31.4
-33.7
-34.8
-36.5
-38.9
-41.8
-45.7
s
22
(Mag)
0.06
0.08
0.12
0.16
0.18
0.19
0.20
0.22
0.22
0.22
0.22
0.22
0.20
0.18
0.15
0.12
0.10
0.08
0.06
0.08
0.11
s
22
(Ang)
5.0
4.9
16.8
5.2
-5.1
-12.7
-20.0
-29.2
-37.3
-45.0
-53.8
-61.2
-70.4
-81.2
-89.0
-101.9
-116.6
-146.8
179.8
141.9
111.7
K
1.07
1.07
1.05
1.06
1.08
1.11
1.14
1.20
1.26
1.33
1.41
1.49
1.59
1.68
1.76
1.82
1.86
1.86
1.85
1.80
1.72
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead.
The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
MSA-2543 Typical Scattering Parameters
T
A
= 25°C, I
d
= 30 mA
Freq
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
s
11
Mag
0.03
0.11
0.20
0.25
0.29
0.33
0.35
0.37
0.37
0.37
0.36
0.36
0.34
0.31
0.29
0.25
0.22
0.18
0.15
0.13
0.15
s
11
Ang
78.4
56.5
49.4
25.8
10.4
1.3
-10.6
-23.4
-35.6
-45.4
-56.9
-66.4
-77.4
-89.0
-98.7
-109.5
-120.9
-139.9
-162.0
163.5
129.7
s
21
(dB)
17.91
17.78
17.31
16.45
15.57
14.67
13.88
12.99
12.20
11.63
10.98
10.53
10.04
9.58
9.22
8.88
8.59
8.21
7.89
7.49
7.09
s
21
(Mag)
7.86
7.74
7.33
6.65
6.01
5.42
4.94
4.46
4.07
3.82
3.54
3.36
3.18
3.01
2.89
2.78
2.69
2.57
2.48
2.37
2.26
s
21
(Ang)
173.6
157.9
136.2
116.6
102.3
91.2
79.4
66.1
53.9
43.9
32.3
22.9
11.8
0.7
-8.7
-19.1
-28.3
-39.8
-49.4
-61.1
-72.7
s
12
(dB)
-20.96
-20.89
-20.67
-20.47
-20.30
-20.16
-20.03
-20.02
-19.96
-19.98
-19.94
-20.08
-20.09
-20.13
-19.95
-19.71
-19.48
-18.98
-18.53
-17.89
-17.19
s
12
(Mag)
0.090
0.090
0.093
0.095
0.097
0.098
0.100
0.100
0.100
0.100
0.101
0.099
0.099
0.099
0.101
0.103
0.106
0.112
0.118
0.128
0.138
s
12
(Ang)
-0.5
-0.7
-1.4
-3.4
-4.9
-7.4
-9.7
-13.6
-16.9
-19.7
-22.5
-25.3
-27.3
-29
-30.8
-32.8
-34
-36
-38.1
-41.3
-44.6
s
22
(Mag)
0.06
0.09
0.12
0.15
0.18
0.20
0.21
0.22
0.23
0.24
0.23
0.23
0.22
0.19
0.17
0.14
0.11
0.08
0.07
0.07
0.10
s
22
(Ang)
15.5
22.2
39.7
21.1
7.3
-2.6
-11.6
-22.5
-31.5
-39.6
-49.1
-57.2
-66.4
-77.3
-84.9
-96.8
-110.1
-137.4
-166.4
151.7
118.3
K
1.06
1.05
1.02
1.03
1.04
1.07
1.10
1.16
1.22
1.28
1.37
1.45
1.54
1.65
1.72
1.77
1.81
1.82
1.81
1.76
1.69
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead.
The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
5
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