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ZTX949

Description
RF POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size63KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX949 Overview

RF POWER TRANSISTOR

ZTX949 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionE-LINE PACKAGE-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)4.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.32 V
ZTX949
ZTX949
MAX.
-1000
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
V
CB
=-10V, f=1MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
mV
IC=-5A, V
CE
=-1V*
UNIT
CONDITIONS.
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
V
BE(on)
-860
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
35
ISSUE 3 – JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
C
B
E
Transition Frequency
f
T
100
Output Capacitance
C
obo
122
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
-50
-30
-6
-20
-4.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
120
130
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
MIN.
-50
-50
TYP.
-80
-80
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
1K
V
(BR)CEO
-30
-45
V
I
C
=-10mA*
4.0
t
1
D=t
1
/t
P
150
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
V
(BR)EBO
I
CBO
Collector Cut-Off Current
-6
-8
-50
-1
V
nA
µ
A
I
E
=-100
µ
A
V
CB
=-40V
V
CB
=-40V, T
amb
=100°C
50
1.0
Max Power Dissipation - (Watts)
-40 -20
0
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
0.1
1
10
100
re
20 40
60 80 100 120 140 160 180 200
0
0.0001
nA
I
CER
R
1K
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I
EBO
V
CE(sat)
-40
-80
-100
-240
Base-Emitter
Saturation Voltage
V
BE(sat)
3-312
-960
µ
A
T -Temperature
(°C)
Pulse Width (seconds)
-50
-1
-10
-60
-100
-160
-320
-1100
V
CB
=-40V
V
CB
=-40V, T
amb
=100°C
nA
mV
mV
mV
mV
mV
V
EB
=-6V
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-300mA*
I
C
=-5A, I
B
=-300mA*
Derating curve
Maximum transient thermal impedance
3-313
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