ZTX948
ZTX948
MAX.
-1000
300
mV
IC=-5A, V
CE
=-1V*
UNIT
CONDITIONS.
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
BE(on)
-860
Static Forward
Current Transfer Ratio
h
FE
100
100
75
60
15
200
200
160
130
40
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
C
B
E
Transition Frequency
f
T
80
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
SYMBOL
-40
-20
-6
-20
-4.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Output Capacitance
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
C
obo
163
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
126
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
150
50
°C/W
°C/W
UNIT
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
MIN.
-40
-40
TYP.
-55
-55
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
≤
1K
Ω
-20
-30
V
I
C
=-10mA*
4.0
t
1
D=t
1
/t
P
150
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
V
(BR)EBO
I
CBO
Collector Cut-Off Current
I
CER
R
≤
1K
Ω
-6
-8
-50
-1
V
nA
µ
A
I
E
=-100
µ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
50
1.0
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
0.1
1
10
100
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
-50
-1
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
EBO
V
CE(sat)
-45
-90
-180
-230
V
BE(sat)
3-309
-960
-10
-100
-150
-250
-310
-1100
µ
A
nA
nA
mV
mV
mV
mV
mV
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
V
EB
=-6V
I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-5A, I
B
=-300mA*
I
C
=-5A, I
B
=-300mA*
Derating curve
Maximum transient thermal impedance
3-310
ZTX948
ZTX948
MAX.
-1000
300
mV
IC=-5A, V
CE
=-1V*
UNIT
CONDITIONS.
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
BE(on)
-860
Static Forward
Current Transfer Ratio
h
FE
100
100
75
60
15
200
200
160
130
40
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
C
B
E
Transition Frequency
f
T
80
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
SYMBOL
-40
-20
-6
-20
-4.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Output Capacitance
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
C
obo
163
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
126
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
150
50
°C/W
°C/W
UNIT
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
MIN.
-40
-40
TYP.
-55
-55
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
≤
1K
Ω
-20
-30
V
I
C
=-10mA*
4.0
t
1
D=t
1
/t
P
150
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
V
(BR)EBO
I
CBO
Collector Cut-Off Current
I
CER
R
≤
1K
Ω
-6
-8
-50
-1
V
nA
µ
A
I
E
=-100
µ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
50
1.0
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
0.1
1
10
100
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
-50
-1
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
EBO
V
CE(sat)
-45
-90
-180
-230
V
BE(sat)
3-309
-960
-10
-100
-150
-250
-310
-1100
µ
A
nA
nA
mV
mV
mV
mV
mV
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
V
EB
=-6V
I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-5A, I
B
=-300mA*
I
C
=-5A, I
B
=-300mA*
Derating curve
Maximum transient thermal impedance
3-310
ZTX948
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
1.6
I
C
/I
B
=50
T
amb
=25°C
1.4
I
C
/I
B
=10
1.6
1.4
-55°C
+25°C
+175°C
1.2
1.2
1.0
1.0
0.8
0.8
V
CE(sat)
- (Volts)
0.4
V
CE(sat)
- (Volts)
0.6
0.6
0.4
0.2
0.01
0.1
1
10 20
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
1.4
+100°C
+25°C
-55°C
V
CE
=1V
1.6
I
C
/I
B
=10
300
1.4
-55°C
+25°C
+100°C
+175°C
1.2
1.2
1.0
200
1.0
0.8
0.8
h
FE
- Normalised Gain
0.4
h
FE
- Typical Gain
V
BE(sat)
- (Volts)
0.6
100
0.6
0.4
0.2
0.01
0.1
1
10 20
0.2
0
0.001
0.01
0.1
1
10 20
0
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
100
1.6
1.4
-55°C
+25°C
+100°C
+175°C
V
CE
=1V
1.2
10
1.0
V
BE
- (Volts)
0.8
0.6
0.2
0
1
10
100
0.001
0.01
0.1
1
10 20
I
C
- Collector Current (Amps)
0.4
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0.1
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-311
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