ZTX853
ZTX853
MAX.
950
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=10V
V
CB
=10V, f=1MHz
I
C
=100mA, V
CE
=10V
f=50MHz
V
IC=4A, V
CE
=2V*
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
V
BE(on)
830
h
FE
Static Forward
Current Transfer
Ratio
100
100
50
20
200
200
100
30
ISSUE 3 - NOVEMBER 1995
FEATURES
* 100 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
=1.2 Watts
C
B
E
Transition Frequency
f
T
130
Output Capacitance
C
obo
35
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
200
100
6
10
4
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
50
1650
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
MIN.
200
200
100
6
TYP.
300
300
120
8
MAX.
UNIT
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
IC=1
µ
A, RB
≤
1K
Ω
I
C
=10mA*
I
E
=100
µ
A
4.0
t
1
D=t
1
/t
P
150
3.0
t
P
D=0.6
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
0.1
1
10
100
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
50
1.0
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
re
Max Power Dissipation - (Watts)
I
CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
14
100
160
V
BE(sat)
3-297
960
50
1
50
1
10
50
150
200
1100
µ
A
nA
nA
µ
A
V
CB
=150V
V
CB
=150V, T
amb
=100°C
V
CB
=150V
V
CB
=150V, T
amb
=100°C
nA
mV
mV
mV
mV
V
EB
=6V
I
C
=0.1A, I
B
=5mA
I
C
=2A, I
B
=100mA
I
C
=4A, I
B
=400mA*
I
C
=4A, I
B
=400mA*
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-298
ZTX853
ZTX853
MAX.
950
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=10V
V
CB
=10V, f=1MHz
I
C
=100mA, V
CE
=10V
f=50MHz
V
IC=4A, V
CE
=2V*
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
V
BE(on)
830
h
FE
Static Forward
Current Transfer
Ratio
100
100
50
20
200
200
100
30
ISSUE 3 - NOVEMBER 1995
FEATURES
* 100 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
=1.2 Watts
C
B
E
Transition Frequency
f
T
130
Output Capacitance
C
obo
35
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
200
100
6
10
4
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
50
1650
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
MIN.
200
200
100
6
TYP.
300
300
120
8
MAX.
UNIT
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
IC=1
µ
A, RB
≤
1K
Ω
I
C
=10mA*
I
E
=100
µ
A
4.0
t
1
D=t
1
/t
P
150
3.0
t
P
D=0.6
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
0.1
1
10
100
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
50
1.0
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
re
Max Power Dissipation - (Watts)
I
CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
14
100
160
V
BE(sat)
3-297
960
50
1
50
1
10
50
150
200
1100
µ
A
nA
nA
µ
A
V
CB
=150V
V
CB
=150V, T
amb
=100°C
V
CB
=150V
V
CB
=150V, T
amb
=100°C
nA
mV
mV
mV
mV
V
EB
=6V
I
C
=0.1A, I
B
=5mA
I
C
=2A, I
B
=100mA
I
C
=4A, I
B
=400mA*
I
C
=4A, I
B
=400mA*
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-298
ZTX853
TYPICAL CHARACTERISTICS
0.8
300
1.6
1.4
0.6
200
V
CE
=5V
V
CE
=1V
100
1.2
1.0
0.4
V
CE(sat)
- (Volts)
h
FE
- Normalised Gain
0.2
0.4
0.2
0.01
0.1
1
10
100
0
0
0.01
0.1
1
10
100
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
V
CE
=1V
2.0
2.0
1.5
1.5
V
BE(sat)
- (Volts)
1.0
V
BE
- (Volts)
I
C
/I
B
=50
1.0
0.5
0.01
0.1
1
10
100
0.5
0.001
0.01
0.1
1
10
100
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
10
Single Pulse Test at T
amb
=25°C
1
I
C
- Collector Current (Amps)
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.1
1
10
100
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
3-299
h
FE
- Typical Gain
I
C
/I
B
=10
I
C
/I
B
=50
0.8
0.6
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