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Datasheet> All Categories > Discrete semiconductor> The transistor> ZTX851
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ZTX851

Description
5 A, 60 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size61KB，3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX851 Overview

5 A, 60 V, NPN, Si, POWER TRANSISTOR

ZTX851 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionE-LINE PACKAGE-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
VCEsat-Max0.25 V

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ZTX851
ZTX851
MAX.
950
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=10V
V
CB
=10V, f=1MHz
I
C
=100mA, V
CE
=10V
f=50MHz
mV
IC=4A, V
CE
=1V*
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=10mA, V
CE
=1V
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
V
BE(on)
840
h
FE
Static Forward
Current Transfer
Ratio
100
100
75
25
200
200
120
50
ISSUE 2 – AUGUST 94
FEATURES
* 60 Volt V
CEO
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* P
tot
=1.2 Watts
APPLICATIONS
* Emergency lighting circuits
C
B
E
Transition Frequency
f
T
130
Output Capacitance
C
obo
45
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
150
60
6
20
5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
45
1100
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
MIN.
150
150
TYP.
220
220
MAX.
UNIT
V
V
CONDITIONS.
I
C
=100
µ
A
IC=1
µ
A, RB
≤
1K
Ω
60
85
V
I
C
=10mA*
4.0
t
1
D=t
1
/t
P
150
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
0.1
1
10
100
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
50
V
(BR)EBO
I
CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
6
8
50
1
50
1
10
10
50
100
200
V
BE(sat)
3-294
920
50
100
150
250
1050
V
µ
A
I
E
=100
µ
A
nA
nA
µ
A
1.0
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
re
V
CB
=120V
V
CB
=120V, T
amb
=100°C
V
CB
=120V
V
CB
=120V, T
amb
=100°C
nA
mV
mV
mV
mV
mV
V
EB
=6V
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-295

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