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ZTX756

Description
500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size49KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX756 Overview

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

ZTX756 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity20 pF
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.5 V
ZTX756
ZTX757
I
B1
=I
B2
=I
C
/10
V
CE
=10V
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ZTX756
ZTX757
TYPICAL CHARACTERISTICS
250
td
tr
ts tf
µs µs
4
1.6
ISSUE 2 – JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
C
B
I
C
/I
B
=10
ts
1.4
200
3
1.2
1.0
tf
td
tr
tf
tr
0.1
1
ts
td
E
150
2
0.8
V
CE(sat)
- (mV)
0.6
100
Switching time
1
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
I
C
P
tot
T
j
:T
stg
V
EBO
I
CM
V
CEO
V
CBO
SYMBOL
ZTX756
-200
-200
-5
-1
-0.5
1
E-Line
TO92 Compatible
ZTX757
-300
-300
UNIT
V
V
V
A
A
W
-55 to +200
°C
0.2
0.0001
0.001
0.01
0.1
1
0
0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Switching Speeds
100
1.2
80
I
C
/I
B
=10
1.0
60
V
CE
=5V
0.8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT
CONDITIONS.
MIN.
Collector-Base
Breakdown Voltage
0.0001
0.001
0.01
0.1
1
40
20
V
BE(sat)
- (Volts)
0.6
MAX. MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-200
-200
-5
-100
-300
-300
-5
MAX.
V
V
V
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
-100
nA
nA
h
FE
- Normalised Gain (%)
0.4
0
0.0001
0.001
0.01
0.1
1
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1.0
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-100
-0.5
-1.0
-1.0
-100
-0.5
-1.0
-1.0
nA
V
V
V
V
EB
=-3V, I
C
=0
I
C
=-100mA,
I
B
=-10mA*
I
C
=-100mA,
I
B
=-10mA*
IC=-100mA, V
CE
=-5V*
1.2
1.0
V
CE
=5V
0.1
0.8
V
BE
- (Volts)
0.6
0.01
D.C.
1s
100ms
10ms
1.0ms
300µs
I
C
- Collector Current (Amps)
0.4
ZTX756
ZTX757
0.0001
10
0.001
0.01
0.1
1
0.001
100
1000
50
40
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
30
20
3-265
50
40
30
20
MHz
pF
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
1
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
3-266

ZTX756 Related Products

ZTX756 ZTX757
Description 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction TO-92 COMPATIBLE, E-LINE PACKAGE-3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-based maximum capacity 20 pF 20 pF
Collector-emitter maximum voltage 200 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz
VCEsat-Max 0.5 V 0.5 V
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