ZTX753DCSM
MECHANICAL DATA
Dimensions in mm (inches)
PNP DUAL TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
1.40 ± 0.15
(0.055 ± 0.006)
FEATURES
• DUAL SILICON PLANAR PNP
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
3
4
5
TRANSISTORS
• HERMETIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVEL OPTIONS
A
6
0.23
rad.
(0.009)
1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
A=
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
ABSOLUTE MAXIMUM RATINGS PER SIDE
(T
C
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
TOT
T
j
T
STG
R
q
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation @ T
amb
= 25°C
Derate above 25°C
Operating And Storage Temperature Range
Junction - Ambient Thermal Resistance
-120V
-100V
-5V
-6A
-2A
1W
8mW/°C
–55 to 150°C
125°C/W
J-A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
Issue 3
ZTX753DCSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cut-off Current
Emitter Cut-off Current
Test Conditions
I
C
= 100
m
A
I
E
= -100
m
A
V
CB
= -100V
T = 100°C
V
EB
= -4V
I
C
= -500mA
I
B
= -50mA*
I
B
= -100mA*
I
B
= -200mA*
I
B
= -100mA*
V
CE
= -2V*
V
CE
= -2V*
V
CE
= 2V*
V
CE
= -2V*
V
CE
= -2V*
Min.
-120
-100
-5
Typ.
Max. Unit
V
-0.1
-10
-0.1
m
Collector – Emitter Breakdown Voltage I
C
= 10mA
A
-0.2
-0.35
-0.8
-1.0
-0.95
70
100
55
25
200
200
110
55
-0.3
-0.5
-1.0
-1.3
-1.2
300
V
Collector – Emitter Saturation Voltage I
C
= -1A
I
C
= -2A
Base – Emitter Saturation Voltage
Base – Emitter Turn-On Voltage
I
C
= -1A
I
C
= -1A
I
C
= -50mA
I
C
= -500mA
I
C
= -1A
I
C
= -2A
H
FE
DC Current Gain
—
* Pulse test tp = 300ms ,
d £
2%
DYNAMIC CHARACTERISTICS
Parameter
f
T
C
obo
T
on
T
off
Transition Frequency
Output Capacitance
Switching Times
Switching Times
(T
A
= 25°C unless otherwise stated)
Test Conditions
I
C
= -100mA
V
CB
= -10V
V
CE
= -5V
f = 1.0MHz
f = 100MHz
Min.
100
Typ.
140
Max. Unit
MHz
30
pF
ns
I
C
= -500mA V
CC
= 10V
I
B1
=I
B2
=50mA
40
600
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
Issue 3
Embedded System
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