Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-226AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 8 µs |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 0.2 mA |
| Maximum DC gate trigger voltage | 0.8 V |
| Maximum holding current | 5 mA |
| JEDEC-95 code | TO-226AA |
| JESD-30 code | O-PBCY-T3 |
| JESD-609 code | e0 |
| Maximum leakage current | 0.1 mA |
| On-state non-repetitive peak current | 8 A |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum on-state voltage | 1.7 V |
| Maximum on-state current | 800 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum rms on-state current | 0.8 A |
| Off-state repetitive peak voltage | 400 V |
| Repeated peak reverse voltage | 400 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
| BRX49 | 2N5061 | BRX44 | BRY55-100 | BRY55-500 | BRY55-600 | BRX45 | BRX46 | |
|---|---|---|---|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-92, PLASTIC, TO-226AA, 3 PIN | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-226AA | Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-226AA |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Nominal circuit commutation break time | 8 µs | 10 µs | 8 µs | 30 µs | 20 µs | 20 µs | 8 µs | 8 µs |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum DC gate trigger current | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA |
| Maximum DC gate trigger voltage | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V |
| Maximum holding current | 5 mA | 5 mA | 5 mA | 5 mA | 5 mA | 5 mA | 5 mA | 5 mA |
| JEDEC-95 code | TO-226AA | TO-92 | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA |
| JESD-30 code | O-PBCY-T3 | O-PBCY-W3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum leakage current | 0.1 mA | 0.01 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA |
| On-state non-repetitive peak current | 8 A | 10 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum on-state voltage | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.5 V | 1.7 V | 1.7 V | 1.7 V |
| Maximum on-state current | 800 A | 510 A | 800 A | 800 A | 800 A | 800 A | 800 A | 800 A |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -65 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A |
| Off-state repetitive peak voltage | 400 V | 60 V | 30 V | 100 V | 500 V | 600 V | 60 V | 100 V |
| Repeated peak reverse voltage | 400 V | 60 V | 30 V | 100 V | 500 V | 600 V | 60 V | 100 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | WIRE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Trigger device type | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
| Maker | Motorola ( NXP ) | - | - | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-T3 | - | - | - | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | - | - |