|
BT258S600R |
BT258S600RT/R |
BT258S500R |
| Description |
Silicon Controlled Rectifier, 5000mA I(T), 600V V(DRM) |
Silicon Controlled Rectifier, 5000mA I(T), 600V V(DRM) |
Silicon Controlled Rectifier, 5000mA I(T), 500V V(DRM) |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
| Maker |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code |
unknown |
unknown |
unknown |
| Nominal circuit commutation break time |
100 µs |
100 µs |
100 µs |
| Critical rise rate of minimum off-state voltage |
50 V/us |
50 V/us |
50 V/us |
| Maximum DC gate trigger current |
0.2 mA |
0.2 mA |
0.2 mA |
| Maximum DC gate trigger voltage |
1.5 V |
1.5 V |
1.5 V |
| Maximum holding current |
6 mA |
6 mA |
6 mA |
| JESD-609 code |
e0 |
e0 |
e0 |
| Maximum leakage current |
0.5 mA |
0.5 mA |
0.5 mA |
| On-state non-repetitive peak current |
75 A |
75 A |
75 A |
| Maximum on-state voltage |
1.5 V |
1.5 V |
1.5 V |
| Maximum on-state current |
5000 A |
5000 A |
5000 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
| Off-state repetitive peak voltage |
600 V |
600 V |
500 V |
| surface mount |
YES |
YES |
YES |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Trigger device type |
SCR |
SCR |
SCR |