BTW 66
BTW 67
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
ISOLATED PACKAGE :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
K
A
G
DESCRIPTION
The BTW 66 and BTW 67 Family Silicon Controlled
Rectifiers are high performance glass passivated
chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average on-state current (180° conduction
angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
Parameter
BTW 66
BTW 67
BTW 66
BTW 67
BTW 66
BTW 67
BTW 66
BTW 67
I2t
dI/dt
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
200
VDRM
VRRM
March 1995
Repetitive peak off-state voltage
Tj = 125
°C
200
400
400
BTW 66
BTW 67
Tc=75°C
Tc=75°C
Tc=75°C
Tc=75°C
tp=8.3 ms
tp=10 ms
RD 91
(Plastic)
Value
30
40
20
25
420
525
400
500
800
1250
100
Unit
A
A
A
tp=10 ms
A2s
A/µs
°C
°C
°C
Tstg
Tj
Tl
- 40 to + 150
- 40 to + 125
230
Symbol
BTW 66- / BTW 67-
600
600
800
800
1000
1000
1200
1200
Unit
V
1/6
BTW 66 / BTW 67
THERMAL RESISTANCES
Symbol
Rth (c-h)
Contact (case to heatsink)
BTW 66
BTW 67
Parameter
Value
0.10
1.2
1.0
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 40W (tp = 20
µs)
IFGM = 8A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Value
BTW 66
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
VD =12V
VD =12V
(DC) RL=33Ω
(DC) RL=33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
Tj=25°C
gate open
tp= 380µs
Tj=25°C
Tj= 125°C
VDRM
≤
800V
VDRM
≥
1000V
Tj= 125°C
MIN
MAX
0.02
6
500
250
100
V/µs
mA
Tj=25°C
Tj=25°C
MAX
MAX
MIN
TYP
TYP
MAX
MAX
75
2.2
50
1.5
0.2
2
50
150
2.0
BTW 67
80
mA
V
V
µs
mA
mA
V
Unit
VD =VDRM RL =3.3kΩ
VD =VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA
BTW 66 ITM= 60A
BTW 67 ITM= 80A
VDRM
VRRM
Rated
Rated
Linear slope up to
VD =67%VDRM
gate open
tq
VD =67%VDRM ITM= 60A VR = 75V
dITM/dt=30 A/µs
dVD/dt= 20V/µs
Tj= 125°C
TYP
µs
2/6
BTW66 / BTW 67
Package
BTW 66
(Insulated)
IT(RMS)
A
30
VDRM / VRRM
V
200
400
600
800
1000
1200
BTW 67
(Insulated)
40
200
400
600
800
1000
1200
Sensitivity Specification
BTW
X
X
X
X
X
X
X
X
X
X
X
X
Fig.1 :
Maximum average power dissipation versus
average on-state current (BTW 66).
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 66).
Fig.3 :
Maximum average power dissipation versus
average on-state current (BTW 67).
Fig.4 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 67).
3/6
BTW 66 / BTW 67
Fig.5 :
Average on-state
temperature (BTW 66).
current
versus
case
Fig.6 :
Average on-state
temperature (BTW 67).
current versus case
Fig.7 :
Relative variation of thermal impedance junction
to case versus pulse duration.
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
Zth(j-c)/Rth(j-c)
1
0.1
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
Fig.9 :
Non repetitive surge peak on-state current
versus number of cycles (BTW 66).
Fig10 :
Non repetitive surge peak on-state current
versus number of cycles (BTW 67).
4/6
BTW66 / BTW 67
Fig.11 :
Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2t (BTW 66).
Fig.12 :
Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2 t (BTW 67).
Fig.13 :
On-state characteristics (maximum values)
(BTW 66).
Fig.14 :
On-state characteristics (maximum values)
(BTW 67).
5/6
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