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BT134W500ET/R

Description
TRIAC, 500V V(DRM), 1A I(T)RMS
CategoryAnalog mixed-signal IC    Trigger device   
File Size282KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT134W500ET/R Overview

TRIAC, 500V V(DRM), 1A I(T)RMS

BT134W500ET/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature120 °C
Maximum rms on-state current1 A
Off-state repetitive peak voltage500 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC

BT134W500ET/R Related Products

BT134W500ET/R BT134W600ET/R
Description TRIAC, 500V V(DRM), 1A I(T)RMS TRIAC, 600V V(DRM), 1A I(T)RMS
Is it Rohs certified? incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Critical rise rate of minimum off-state voltage 30 V/us 30 V/us
Maximum DC gate trigger current 10 mA 5 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 15 mA 10 mA
JESD-609 code e0 e3
Maximum leakage current 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V
Maximum operating temperature 120 °C 120 °C
Maximum rms on-state current 1 A 1 A
Off-state repetitive peak voltage 500 V 600 V
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Trigger device type TRIAC TRIAC
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