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ZTX704

Description
1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size68KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX704 Overview

1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR

ZTX704 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
VCEsat-Max1.3 V
ZTX704
ZTX705
ZTX704
ZTX705
UNIT
CONDITIONS.
MAX.
30K
I
C
=-100mA, V
CE
=-10V
f=20MHz
V
EB
=-0.5V, f=1MHz
V
CE
=-10V, f=1MHz
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
R
5
= 22KΩ
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX704
ZTX705
MIN.
MAX. MIN.
h
FE
Static Forward
Current Transfer
Ratio
3K
3K
3K
2K
30K
3K
3K
3K
2K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition
Frequency
pF
pF
µ
s
µ
s
f
T
160 Typical
160 Typical MHz
ISSUE 3 – MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
* P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
C
B
E
Input Capacitance
PARAMETER
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
SYMBOL
C
ibo
90 Typical
90 Typical
ABSOLUTE MAXIMUM RATINGS.
ZTX704
-120
-100
E-Line
TO92 Compatible
ZTX705
-140
-120
-10
-4
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
Output Capacitance
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
C
obo
15 Typical
15 Typical
Switching Times
t
on
0.6 Typical
0.6 Typical
t
off
0.8 Typical
0.8 Typical
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
1.0
R
5
= 100KΩ
R
5
= 1MΩ
0.8 R
5
=
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature
Range
0.6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX704
MIN.
Collector-Base
Breakdown Voltage
100
0.4
DC Conditions
ZTX705
MAX. MIN.
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
-120
-100
-10
-140
-120
-10
MAX.
UNIT
V
V
V
CONDITIONS.
0.2
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
Maximum Power Dissipation (W)
0
1
10
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
I
CBO
-0.1
-10
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
-10
-0.1
-1.3
-2.5
-1.8
-1.7
3-250
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V,
T
amb
=100°C
V
CB
=-120V,
T
amb
=100°C
V
CES
=-80V
V
EB
=-8V
V
V
V
V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-5V*
The maximum permissible operational temperature can be obtained from this graph using
the following equation
+25°
C
T
amb
(
max
)
=
Power
(max ) −
Power
(
act
)
0.0057
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-251

ZTX704 Related Products

ZTX704 ZTX705
Description 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 100 V 120 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 2000
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power consumption environment 2.5 W 2.5 W
Maximum power dissipation(Abs) 2.5 W 1 W
Certification status Not Qualified Not Qualified
Guideline CECC CECC
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 160 MHz 160 MHz
VCEsat-Max 1.3 V 1.3 V
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