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ZTX652

Description
2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX652 Overview

2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR

ZTX652 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz
VCEsat-Max0.5 V
ZTX652
ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX652
ZTX653
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT CONDITIONS.
MAX.
MHz
ns
ns
PARAMETER
V
CB
=10V f=1MHz
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
MAX.
UNIT
at T
amb
=25°C
derate above 25°C
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX652
SYMBOL
V
(BR)CBO
MIN. TYP.
100
ZTX653
MAX. MIN. TYP.
120
MAX.
30
pF
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
I
C
=100mA, V
CE
=5V
f=100MHz
PARAMETER
SYMBOL
ZTX652
ZTX653
MIN. TYP.
175
80
1200
MAX. MIN. TYP.
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
C
B
E
Transition
Frequency
f
T
140
175
140
Switching Times
t
on
80
t
off
1200
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
ZTX652
100
80
5
6
2
1
5.7
E-Line
TO92 Compatible
ZTX653
120
100
UNIT
V
V
V
A
A
W
mW/°C
-55 to +200
°C
Output Capacitance C
obo
30
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
THERMAL CHARACTERISTICS
175
116
70
PARAMETER
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
Operating and Storage Temperature Range
Thermal Resistance: Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT CONDITIONS.
V
I
C
=100
µ
A
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
D=1 (D.C.)
200
t
1
D=t
1
/t
P
t
P
D=0.5
Collector-Base
Breakdown
Voltage
2.0
V
(BR)CEO
Collector-Emitter
Breakdown
Voltage
80
100
V
I
C
=10mA*
5
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
5
V
C
as
1.5
e
te
m
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
V
(BR)EBO
I
CBO
I
E
=100
µ
A
0.1
10
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
0.1
1
10
Thermal Resistance (°C/W)
0.5
per
at u
re
100
0.1
10
Emitter Cut-Off
Current
I
EBO
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
0.13
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
0.13
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
µ
A
µ
A
µ
A
µ
A
µ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
V
EB
=4V
V
V
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
3-222
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-223
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