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Datasheet> All Categories > Discrete semiconductor> The transistor> ZTX602
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ZTX602

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size70KB，3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX602 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX602 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max1 V

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ZTX602
ZTX603
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ZTX602
ZTX603
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
CONDITIONS.
MAX.
PARAMETER
SYMBOL
ZTX602
ZTX603
MIN.
MAX. MIN.
h
FE
100K
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
ISSUE 1 – MARCH 94
FEATURES
* 80 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
C
B
E
Static Forward
Current Transfer
Ratio
2K
5K
2K
0.5K
100K
2K
5K
2K
0.5K
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency f
T
150
150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
V
CBO
SYMBOL
ZTX602
80
60
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX603
100
80
UNIT
V
V
V
A
A
W
mW/ °C
-55 to +200
°C
Input Capacitance
pF
µ
s
µ
s
C
ibo
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
90 Typical
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15 Typical
Switching Times
t
on
0.5 Typical
t
off
1.1 Typical
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
1.0
R
5
= 200KΩ
R
5
= 50KΩ
R
5
= 10KΩ
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
ZTX603
R
5
= 1MΩ
R
5
=
∞
0.8
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
80
60
10
I
CBO
ZTX602
MIN.
100
80
10
0.01
ZTX603
MAX. MIN.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
0.6
0.4
DC Conditions
0.2
ZTX602
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Maximum Power Dissipation (W)
0
100
200
1
10
V
CE
- Collector-Emitter Voltage (Volts)
Collector Cut-Off
Current
Voltage Derating Graph
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
10
0.1
10
1.0
1.0
1.8
1.7
3-209
0.01
10
0.1
µ
A
µ
A
µ
A
µ
A
µ
A
V
CB
=60V
V
CB
=80V
V
CB
=60V,
T
amb
=100°C
V
CB
=80V,
T
amb
=100°C
V
EB
=8V
10
1.0
1.0
1.8
1.7
µ
A
µ
A
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act)
+25°
C
0.0057
V
CES
=60V
V
CES
=80V
V
V
V
V
I
C
=400mA,
I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-210

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