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BDW42BG

Description
15A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size143KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BDW42BG Overview

15A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDW42BG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)250
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
BDW42G - NPN, BDW46G,
BDW47G - PNP
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min)
BDW46
100 Vdc (min)
BDW42/BDW47
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
Monolithic Construction with Built−In Base Emitter Shunt resistors
TO−220AB Compact Package
These are Pb−Free Packages*
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Collector-Base Voltage
BDW46
BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
80
100
Vdc
80
100
5.0
15
0.5
85
0.68
−55
to +150
Vdc
Adc
Adc
Unit
Vdc
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
BDWxx
AYWWG
V
CB
V
EB
I
C
I
B
P
D
BDWxx = Device Code
x = 42, 46, or 47
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
W
W/°C
°C
Device
BDW42G
BDW46G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
Max
1.47
Unit
°C/W
BDW47G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 15
Publication Order Number:
BDW42/D
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